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W9412G6KH-5I备选型号: IS43R16800E-5TLI

W9412G6KH-5I

Winbond Electronics

IC DRAM 128M PARALLEL 66TSOP II

10 Weeks
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66-TSOP II
Volatile
-40°C~85°C TA
Tray
2016
活跃
3 (168 Hours)
85°C
-40°C
2.3V~2.7V
200MHz
Parallel
128Mb 8M x 16
200MHz
50ns
DRAM
Parallel
15ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43R16800E-5TLI

ISSI, Integrated Silicon Solution Inc

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
66-TSSOP (0.400, 10.16mm Width)
-
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
-
-
2.3V~2.7V
-
-
128Mb 8M x 16
200MHz
700ps
DRAM
Parallel
15ns
ROHS3 Compliant
YES
66
66
AUTO/SELF REFRESH
DUAL
1
2.5V
0.65mm
不合格
2.7V
2.5V
2.3V
1
SYNCHRONOUS
16b
8MX16
3-STATE
16
0.003A
134217728 bit
COMMON
4096
248
248
22.22mm
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16160F-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II	对比
	IS43R16800E-5TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比