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W948D2FBJX5I备选型号: IS43DR16160B-3DBL

W948D2FBJX5I

Winbond Electronics

DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA

10 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
-40°C~85°C TA
Tray
2016
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.02
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
90
不合格
1.8V
1.95V
1.7V
256Mb 8M x 32
1
55mA
SYNCHRONOUS
200MHz
5ns
DRAM
Parallel
4MX32
3-STATE
32
15ns
14b
256 Mb
0.00001A
COMMON
4096
24816
24816
13mm
1.025mm
ROHS3 Compliant
-
-
-
-
-
-
IS43DR16160B-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM

8 Weeks
-
表面贴装
84-TFBGA
84
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
84
EAR99
AUTO/SELF REFRESH
8542.32.00.24
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
-
不合格
1.8V
1.9V
1.7V
256Mb 16M x 16
1
-
SYNCHRONOUS
333MHz
450ps
DRAM
Parallel
16MX16
3-STATE
16
15ns
13b
256 Mb
0.025A
COMMON
8192
48
48
12.5mm
1.2mm
ROHS3 Compliant
YES
e1
锡银铜
260
10
16b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16160B-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM	对比
	IS42S32400F-7BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin WBGA	对比