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W949D6DBHX5I备选型号: IS43R16160F-5BL

W949D6DBHX5I

Winbond Electronics

IC DRAM 512M PARALLEL 60VFBGA

10 Weeks
表面贴装
60-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2016
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
R-PBGA-B60
1.95V
1.7V
512Mb 32M x 16
1
SYNCHRONOUS
200MHz
5ns
DRAM
Parallel
32MX16
16
15ns
536870912 bit
9mm
1.025mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
IS43R16160F-5BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA

8 Weeks
表面贴装
60-TFBGA
YES
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
1
2.5V
1mm
-
2.7V
2.3V
256Mb 16M x 16
1
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
16MX16
16
15ns
-
13mm
1.2mm
-
ROHS3 Compliant
60
未说明
未说明
2.5V
13b
256 Mb
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	IS43R16160F-5BL	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA	对比