登录 / 注册

产品

输入型号/关键词

W97AH2KBVX2E备选型号: 71V25761S200BG

W97AH2KBVX2E

Winbond Electronics

DRAM Chip LPDDR2 SDRAM 1G-Bit 32M x 32 1.2V/1.8V 134-Pin VFBGA

10 Weeks
表面贴装
表面贴装
134-VFBGA
134
Volatile
-25°C~85°C TC
Tray
2000
活跃
3 (168 Hours)
134
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
1.14V~1.95V
BOTTOM
1
1.2V
0.65mm
1.3V
1.14V
1Gb 32M x 32
1
SYNCHRONOUS
400MHz
2.5 ns
DRAM
Parallel
32b
32MX32
32
15ns
13b
1 Gb
11.5mm
1mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V25761S200BG

Integrated Device Technology (IDT)

SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

7 Weeks
表面贴装
-
BGA
119
200MHz
-
-
2009
-
3 (168 Hours)
119
流水线结构
-
BOTTOM
1
3.3V
-
-
-
512kB
1
-
-
3.1 ns
-
-
-
-
-
-
17b
4.5 Mb
14mm
2.36mm
符合RoHS标准
e0
no
Tin/Lead (Sn63Pb37)
70°C
0°C
BALL
225
200MHz
20
119
不合格
3.3V
COMMERCIAL
Parallel
3.465V
3.135V
360mA
3-STATE
0.03A
COMMON
Synchronous
36b
22mm
2.15mm
含铅
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	71V35761S200BG	Integrated Device Technology (IDT)	存储器	BGA	SRAM 4 MEG PBSRAM W/ FAST TC	对比
	71V25761S200BG	Integrated Device Technology (IDT)	存储器	BGA	SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM	对比