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W9825G6KH-6备选型号: AS4C1M16S-7TCNTR

W9825G6KH-6

Winbond Electronics

DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II

10 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
Volatile
0°C~70°C TA
Tray
2016
e3
活跃
3 (168 Hours)
54
EAR99
Tin (Sn)
AUTO/SELF REFRESH
3V~3.6V
DUAL
未说明
1
3.3V
0.8mm
未说明
R-PDSO-G54
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5ns
DRAM
Parallel
16MX16
16
268435456 bit
22.22mm
1.2mm
10.16mm
ROHS3 Compliant
-
-
-
-
-
-
-
AS4C1M16S-7TCNTR

Alliance Memory, Inc.

DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM

8 Weeks
表面贴装
50-TSOP (0.400, 10.16mm Width)
YES
Volatile
0°C~70°C TA
Tape & Reel (TR)
2015
e3/e6
活跃
3 (168 Hours)
50
EAR99
PURE MATTE TIN/TIN BISMUTH
AUTO/SELF REFRESH
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
-
3.6V
3V
16Mb 1M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
1MX16
16
-
20.95mm
1.2mm
-
ROHS3 Compliant
50
yes
8542.32.00.02
50
16b
2ns
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS4C1M16S-7TCNTR	Alliance Memory, Inc.	存储器	50-TSOP (0.400, 10.16mm Width)	DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM	对比
	IS42S16400J-6TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S32200L-6TL	ISSI, Integrated Silicon Solution Inc	存储器	86-TFSOP (0.400, 10.16mm Width)	DRAM 64M (2Mx32) 166MHz SDR SDRAM, 3.3V	对比