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W9864G2JB-6I备选型号: IS42S16160J-6BLI

W9864G2JB-6I

Winbond Electronics

IC SDRAM 64MBIT 166MHZ 90TFBGA

10 Weeks
表面贴装
90-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2016
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
R-PBGA-B90
3.6V
3V
64Mb 2M x 32
1
SYNCHRONOUS
166MHz
5ns
DRAM
Parallel
2MX32
32
67108864 bit
13mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
IS42S16160J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

6 Weeks
表面贴装
54-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
54
-
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
S-PBGA-B54
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
16MX16
16
268435456 bit
8mm
1.2mm
8mm
ROHS3 Compliant
e1
Tin/Silver/Copper (Sn/Ag/Cu)
未说明
未说明
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	IS42S16160J-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 256M PARALLEL 54TFBGA	对比