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W988D2FBJX7E备选型号: IS42VM16400M-75BLI

W988D2FBJX7E

Winbond Electronics

DRAM Chip Mobile LPSDR SDRAM 256M-Bit 8Mx32 1.8V

10 Weeks
表面贴装
90-TFBGA
YES
Volatile
-25°C~85°C TC
Tray
2016
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.24
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
90
R-PBGA-B90
不合格
1.95V
1.8V
1.7V
256Mb 8M x 32
1
SYNCHRONOUS
133MHz
5.4ns
DRAM
Parallel
8MX32
32
15ns
0.00001A
268435456 bit
COMMON
16
4096
1248FP
1248
13mm
1.025mm
8mm
ROHS3 Compliant
-
-
IS42VM16400M-75BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 54TFBGA

12 Weeks
表面贴装
54-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
-
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
-
S-PBGA-B54
-
1.95V
-
1.7V
64Mb 4M x 16
1
SYNCHRONOUS
133MHz
6ns
DRAM
Parallel
4MX16
16
-
-
67108864 bit
-
-
-
-
-
8mm
1.2mm
8mm
ROHS3 Compliant
未说明
未说明
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42VM16800H-75BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin TFBGA	对比
	IS42VM16400M-75BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 64M PARALLEL 54TFBGA	对比