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ZXMS6004SGTA备选型号: ZVN4206GTC

ZXMS6004SGTA

Diodes Incorporated

MOSFET N-CH 60V 1.3A SOT223

17 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
7.994566mg
SILICON
1
-40°C~150°C TJ
Tape & Reel (TR)
Automotive, AEC-Q101, INTELLIFET®
2006
e3
活跃
1 (Unlimited)
4
EAR99
Matte Tin (Sn)
HIGH RELIABILITY
1.6W
3.3V 5V
DUAL
鸥翼
260
30
ZXMS6004
R-PDSO-G4
1
N-Channel
1.3A
5.5V
On/Off
1.3A
低侧
增强型MOSFET
1W
700mA
SOURCE
Non-Inverting
5 μs
通用型
SWITCHING
10μs
60V
15 μs
1.3A
1:1
700mV
60V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
METAL-OXIDE SEMICONDUCTOR
350m Ω
350mOhm
自动重启
1.65mm
6.7mm
3.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ZVN4206GTC

Diodes Incorporated

Trans MOSFET N-CH 60V 1A 4-Pin(3 Tab) SOT-223 T/R

17 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
7.994566mg
SILICON
1A Ta
-55°C~150°C TJ
Tape & Reel (TR)
-
2006
e3
活跃
1 (Unlimited)
4
EAR99
Matte Tin (Sn)
快速切换
-
-
DUAL
鸥翼
260
40
-
-
-
-
-
-
-
-
-
增强型MOSFET
2W
-
DRAIN
-
8 ns
-
SWITCHING
12ns
-
15 ns
1A
-
20V
-
-
-
-
-
-
1.65mm
6.7mm
3.7mm
无SVHC
无
ROHS3 Compliant
无铅
4
3V @ 1mA
no
1Ohm
60V
1A
SINGLE
1
N-Channel
1 Ω @ 1.5A, 10V
100pF @ 25V
±20V
1A
60V
8A
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图片	产品型号	品牌	分类	封装	描述	对比
	IRLL024ZPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	Transistor: N-MOSFET; unipolar; HEXFET; 55V; 5A; 2.8W; SOT223	对比
	ZVN4206GTA	Diodes Incorporated	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	MOSFET N-CH 60V 1A SOT223	对比
	ZVN4206GTC	Diodes Incorporated	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	Trans MOSFET N-CH 60V 1A 4-Pin(3 Tab) SOT-223 T/R	对比