N/A

-

N/A

-

BGA-260

有

800 MHz

+ 85 C

1.35 V

0 C

10

1.2 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

Tray

GS81313LQ18GK

SigmaQuad-IIIe B2

Memory & Data Storage

144 Mbit

1.9 A

8 M x 18

SRAM

SRAM

N/A

-

BGA-165

333 MHz

+ 85 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

288 Mbit

800 mA

16 M x 18

N/A

-

Production (Last Updated: 1 week ago)

BGA-165

Parallel

600 V

Compliant

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

GS82582Q19GE

200 °C

-65 °C

White

Compliant

288 Mbit

1.16 A

16 M x 18

1.73 mm

不适用

N/A

-

Non-Compliant

Black

N/A

-

BGA-165

Plastic

+ 85 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

200 MHz

144 Mbit

330 mA, 400 mA

6.5 ns

4 M x 36

N/A

-

N/A

-

TQFP-100

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

280 mA, 335 mA

4.5 ns

512 k x 32

SRAM

SRAM

N/A

-

N/A

-

BGA-260

600 MHz

+ 85 C

1.35 V

0 C

1.2 V

SMD/SMT

Parallel

GS81313HQ18GK

144 Mbit

1.5 A

8 M x 18

N/A

-

BGA-119

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

4 Mbit

165 mA, 200 mA

5.5 ns

256 k x 18

N/A

-

BGA-260

Parallel

800 MHz

+ 85 C

0 C

SMD/SMT

1.35 V

1.2 V

GS81313HQ36GK

144 Mbit

2.55 A

4 M x 36

N/A

-

BGA-119

Parallel

150 MHz

+ 85 C

- 40 C

SMD/SMT

3.6 V

2.3 V

GS84018CB

4 Mbit

140 mA, 150 mA

7.5 ns

256 k x 18

N/A

-

BGA-119

Parallel

250 MHz

+ 85 C

- 40 C

SMD/SMT

3.6 V

2.3 V

GS84036CB

4 Mbit

175 mA, 215 mA

6.5 ns

128 k x 36

N/A

-

10

GSI技术

GSI技术

Memory & Data Storage

SRAM

SRAM

N/A

-

10

GSI技术

GSI技术

Memory & Data Storage

SRAM

SRAM

N/A

-

10

GSI技术

GSI技术

Memory & Data Storage

SRAM

SRAM

N/A

-

10

GSI技术

GSI技术

Memory & Data Storage

SRAM

SRAM

N/A

-

10

GSI技术

GSI技术

Memory & Data Storage

SRAM

SRAM

N/A

-

YES

165

165

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.78

BGA

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8342D36AE-333I

1048576 words

1.8 V

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

1MX36

1.5 mm

36

37748736 bit

PARALLEL

DDR SRAM

1.95 V

1.7 V

17 mm

15 mm

N/A

-

YES

165

165

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.68

BGA

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS88136BD-150

262144 words

2.5 V

e0

3A991.B.2.B

锡铅

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

unknown

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

256KX36

1.4 mm

36

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

YES

260

Non-Compliant

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

有

GS81314LQ18GK-125I

8388608 words

1.2 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.8

3A991.B.2.B

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

SYNCHRONOUS

8MX18

2.3 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

YES

260

Non-Compliant

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

85 °C

GS81314PQ19GK-933

8388608 words

1.3 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.72

Bulk

0.01 %

2

3A991.B.2.B

2 ppm/°C

9.9 kΩ

175 °C

-55 °C

金属箔

8542.32.00.41

300 mW

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

SYNCHRONOUS

8MX18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

Moisture Resistant

8.5344 mm

7.62 mm

2.4892 mm

N/A

-

YES

100

LQFP,

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

7.5 ns

70 °C

GS880Z36BGT-150V

262144 words

1.8 V

LQFP

RECTANGULAR

Rochester Electronics LLC

接触制造商

ROCHESTER ELECTRONICS LLC

5.62

3A991.B.2.A

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

unknown

R-PQFP-G100

COMMERCIAL

SYNCHRONOUS

256KX36

1.6 mm

36

9437184 bit

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

YES

119

119

有

70 °C

10 ns

未说明

PLASTIC/EPOXY

128000

3

网格排列

BGA,

Compliant

BGA

5.7

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

BGA

3.3 V

131072 words

GS842Z36AGB-150

e1

有

3A991.B.2.B

锡银铜

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

1.27 mm

compliant

150 MHz

R-PBGA-B119

不合格

COMMERCIAL

512 kB

4

SYNCHRONOUS

10 ns

128KX36

1.99 mm

36

17 b

4.5 Mb

4718592 bit

PARALLEL

ZBT SRAM

3.6 V

3 V

22 mm

14 mm

无

无SVHC