N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302Q36GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.33 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

16 MWords

8 Bit

表面贴装

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

Synchronous

-40 to 100 °C

144 Mbit

2

1.27 A

Pipelined

16 M x 8

144 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302Q36E-250I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.04

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302Q36E

无

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.14 A

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

6 Weeks

YES

48

48

512000

PLASTIC/EPOXY

未说明

12 ns

70 °C

无

GS74108AX-12

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.16

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

无

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D09E

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

700 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302Q36E

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.13 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302Q18E

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.07 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8128436B-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS8128436B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

4

SYNCHRONOUS

415 mA, 535 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-119

YES

119

119

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

4000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS8128436B-167

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8128436B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

4

SYNCHRONOUS

340 mA, 395 mA

8 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

375 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

144 Mbit

2

940 mA

Pipelined

4 M x 36

22 Bit

144 Mbit

Commercial

无

N/A

-

240

GSI技术

GSI技术

GS71108AGU

Memory & Data Storage

SRAM

SRAM

N/A

-

BGA-165

YES

165

165

1.9 V

表面贴装

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302Q18GE-250I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.07 A

Pipelined

8 M x 18

1.5 mm

18

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

6 Weeks

YES

48

48

85 °C

7 ns

未说明

-40 °C

PLASTIC/EPOXY

128000

3

GRID ARRAY, THIN PROFILE, FINE PITCH

TFBGA,

Industrial grade

FBGA

3.3000 V

Asynchronous

128 kWords

16 Bit

表面贴装

Compliant

BGA

5.22

GSI TECHNOLOGY

不推荐

GSI技术

RECTANGULAR

TFBGA

3.3 V

GS72116AGU-7I

有

-40 to 85 °C

e1

有

3A991.B.2.B

锡银铜

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 Bit

2 Mbit

2097152 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

无

N/A

-

表面贴装

BGA-119

119

119-FPBGA (22x14)

GSI Technology Inc.

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS81284Z18

活跃

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS81284Z18GB

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

144 Mbit

2

250 MHz

390 mA, 490 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

8 M x 18

-

23 b

SRAM

144 Mbit

Industrial

SRAM

8M x 18

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS8128436GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

380 mA, 500 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

48

FBGA

+ 85 C

3.6 V

- 40 C

3 V

SMD/SMT

Parallel

Industrial grade

表面贴装

3.6 V

16 Bit

256 kWords

Asynchronous

3 V

3.3000 V

-40 to 85 °C

4 Mbit

1

115 mA

10 ns

256 k x 16

18 Bit

4 Mbit

Industrial

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

500 MHz

-40 to 100 °C

144 Mbit

2

1.27 A

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

N/A

-

YES

165

165

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q36E-250I

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.69

BGA

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

2MX36

1.5 mm

36

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D08BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

460 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D08BD-300

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

BGA

Commercial grade

300 MHz

FBGA

1.8000 V

1.7 V

8 Bit

1.9 V

有

0 to 85 °C

Tray

GS8342D08BD

3A991.B.2.B

SigmaQuad-II

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

530 mA

0.45

4 M x 8

3-STATE

1.4 mm

8

20 b

SRAM

36 Mb

0.2 A

36

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

YES

100

100

QFP

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

8.5 ns

70 °C

有

GS84036AGT-166

166 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.66

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

4

SYNCHRONOUS

0.31 mA

128KX36

3-STATE

1.6 mm

36

17 b

4 Mb

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8161Z36DGT-200

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

QFP

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

Tray

GS8161Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

210 mA, 210 mA

6.5 ns

512 k x 36

1.6 mm

36

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

SigmaQuad-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

有

GS8182D18BGD-167I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

1.51

BGA

18

Parallel

GSI技术

GSI技术

0.5 ns

GSI TECHNOLOGY

有

167 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Tray

GS8182D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

325 mA

500 ps

1 M x 18

1.4 mm

18

18 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

70 °C

有

GS816036BGT-250

250 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.305 mA

512KX36

3-STATE

1.6 mm

36

0.04 A

18874368 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

TQFP-100

100

181.8@Flow-Through/250@Pipelined MHz

TQFP

2.5, 3.3 V

2.3, 3 V

36 Bit

2.7, 3.6 V

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS880Z36CGT

NBT

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5@Flow-Through/2.5

256 k x 36

SRAM

9

SRAM