N/A

-

BGA-165

N

NBT SRAM

GSI技术

GSI技术

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

SDR

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 36

SRAM

SRAM

N/A

-

TQFP-100

SDR

有

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS880F18CGT

流过

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

120 mA

7.5 ns

512 k x 18

18 b

SRAM

9 Mb

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

2.2 ns

70 °C

有

GS88037CGT-300

300 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.61

QFP

Commercial grade

300 MHz

TQFP

0 to 70 °C

Tray

GS88037CGT

e3

有

3A991.B.2.B

Pipeline

纯哑光锡

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

225 mA

Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Bulk

GS8672T38BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.85 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS882Z36CB-200I

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

Tray

GS882Z36CB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

256 k x 36

1.77 mm

36

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

GSI技术

SigmaDDR-II+

N

DDR-II

有

633 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8672T38BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

2.05 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Bulk

GS816118DGT

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

170 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161Z32DD-200

524288 words

2.5 V

LBGA

Bulk

GS8161Z32DD

3A991.B.2.B

70 °C

0 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

512 k x 32

1.4 mm

32

19 b

18 Mb

16777216 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

9 Bit

表面贴装

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

有

GS8182D09BGD-167

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

167 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

0 to 70 °C

Tray

GS8182D09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

315 mA

Pipelined

2 M x 9

1.4 mm

9

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

7 Weeks

BGA-119

YES

119

119

Details

SDR

BGA, BGA119,7X17,50

网格排列

256000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

7 ns

85 °C

有

GS842Z18CGB-166I

166 MHz

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

有

166 MHz

+ 85 C

3.6 V

- 40 C

84

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Tray

GS842Z18CGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

4 Mbit

SYNCHRONOUS

145 mA, 160 mA

7 ns

256 k x 18

3-STATE

1.99 mm

18

SRAM

0.045 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

网格排列

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS816236DB-200

524288 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

Tray

GS816236DB

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

512 k x 36

1.99 mm

36

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS841Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

140 mA, 170 mA

6.5 ns

128 k x 36

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

100 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS840Z18CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

130 mA, 130 mA

12 ns

256 k x 18

SRAM

SRAM

N/A

-

BGA-165

GSI技术

SigmaQuad-II+

N

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8182D37BD

SigmaQuad II+

Memory & Data Storage

18 Mbit

535 mA

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

400 MHz

+ 85 C

GS8672D20BGE

72 Mbit

1.38 A

4 M x 18

72

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 230 mA

6.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q37BGE

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

2.07 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q36BGE

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.88 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

85 °C

-40 °C

1.8 V

72 Mbit

1

1.45 A

2 M x 36

21 b

72 Mb

72

无

N/A

-

8 Weeks

BGA-165

YES

165

165

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182D08BD-250

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

Tray

GS8182D08BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

420 mA

2 M x 8

1.4 mm

8

SRAM

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

1.88 A

2 M x 36

20 b

72 Mb

72

无

N/A

-

8 Weeks

BGA-119

YES

119

119

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS882Z18CB-150

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.74

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS882Z18CB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

网格排列

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS88236CB-200

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

Tray

GS88236CB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

150 MHz

TQFP

3.3000 V

3.135 V

Synchronous

128 kWords

32 Bit

3.63 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0.686034 oz

0 C

72

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS84032CGT

Pipeline/Flow Through

Memory & Data Storage

4 Mbit

4

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

128 k x 32

17 Bit

SRAM

4 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672Q38BE-400I

400 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA, BGA165,11X15,40

Tray

GS8672Q38BE

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

1.88 A

2 M x 36

3-STATE

1.4 mm

36

SRAM

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm