N/A

-

12 Weeks

BGA-165

YES

165

165

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662DT06BD-450M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

Military grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

-55 to 125 °C

Tray

GS8662DT06BD

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

2

SYNCHRONOUS

Pipelined

8 M x 8

1.4 mm

8

21 Bit

SRAM

72 Mbit

67108864 bit

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS81302T11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

500 MHz

FBGA

-40 to 100 °C

144 Mbit

1

1.08 A

Pipelined

16 M x 8

23 Bit

144 Mbit

Industrial

N/A

-

12 Weeks

BGA-165

YES

165

165

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302DT37GE-450

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

4 MWords

450 MHz

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

1.4 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

144 Mbit

150994944 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

DDR-II

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302T37GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.2 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8162Z72CGC-150I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

220 mA, 240 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-260

260

714 MHz

BGA

QDR

Synchronous

4 MWords

18 Bit

表面贴装

Non-Compliant

有

714 MHz

+ 100 C

- 40 C

8

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Industrial grade

-40 to 85 °C

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2 ECCRAM

Memory & Data Storage

72 Mbit

1

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS880F32CGT-6.5V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

153.8 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 70 °C

Tray

GS880F32CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

125 mA

6.5 ns

Flow-Through

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

8 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

500 MHz

FBGA

0 to 85 °C

144 Mbit

1

1.07 A

Pipelined

16 M x 8

23 Bit

144 Mbit

Commercial

N/A

-

BGA-165

165

18 Bit

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

-40 to 100 °C

GS81302T20GE

144 Mbit

1

905 mA

Pipelined

8 M x 18

144 Mbit

Industrial

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

400 MHz

有

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

DDR-II

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302TT20GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

8 Bit

表面贴装

350 MHz

+ 125 C

1.9 V

- 55 C

1.7 V

SMD/SMT

Parallel

Military grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

72 Mbit

845 mA

Pipelined

8 M x 8

23 Bit

72 Mbit

Military

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

GSI Technology Inc.

3.451645 oz

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS8642Z

活跃

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

有

GS8642Z36GB-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.64

BGA

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

2M x 36

22 mm

14 mm

无

N/A

-

12 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x17)

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Tray

GS81302TT37

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302TT37GE-450I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

7.62

BGA

Industrial grade

450 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS81302TT37GE

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

450 MHz

1.2 A

450 ps

SRAM

Parallel

Pipelined

4 M x 36

1.5 mm

36

-

21 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

4M x 36

17 mm

15 mm

N/A

-

BGA-119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200 MHz

FBGA

-40 to 85 °C

144 Mbit

2

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

GSI技术

SDR

Details

NBT SRAM

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS881Z18CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

130 mA, 155 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Commercial

SRAM

N/A

-

12 Weeks

YES

165

165

有

10

GSI技术

GSI技术

SigmaQuad-II+

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

0.45 ns

无

GS81302D11E-400I

16777216 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Tray

GS81302D11E

3A991.B.2.B

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

SYNCHRONOUS

16MX9

1.5 mm

9

SRAM

150994944 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

450 MHz

BGA

QDR

1.8000 V

Synchronous

16 MWords

表面贴装

8 Bit

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

QDR-II

Military grade

Tray

SigmaQuad-II+

Memory & Data Storage

144 Mbit

Pipelined

16 M x 8

24 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-165

165

0 C

1.9 V

+ 70 C

500 MHz

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

FBGA

Parallel

SMD/SMT

1.7 V

0 to 85 °C

144 Mbit

1.07 A

0.45

8 M x 18

144

N/A

-

BGA-165

165

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

QDR-II

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

- 40 C

-40 to 100 °C

Tray

GS81302DT10E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.185 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Military grade

450 MHz

BGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Tray

GS81302D38E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-165

165

Military grade

350 MHz

BGA

QDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Tray

GS81302D09E

SigmaQuad-II

Memory & Data Storage

144 Mbit

Pipelined

16 M x 9

24 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Military grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

-55 to 125 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT06GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.01 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM