GSI Technology GS81302T20E-500
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GS81302T20E-500
2984-GS81302T20E-500
存储器
BGA-165
大陆
立即发货

DDR SRAM, 8MX18, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS81302T20E-500详情
GSI Technology GS81302T20E-500重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Maximum Operating Supply Voltage
1.9 V
Number of I/O Lines
18 Bit
Number of Words
8 MWords
Timing Type
Synchronous
Minimum Operating Supply Voltage
1.7 V
Typical Operating Supply Voltage
1.8000 V
Supplier Package
FBGA
Interface Type
Parallel
Mounting Styles
SMD/SMT
Supply Voltage-Min
1.7 V
Minimum Operating Temperature
0 C
Supply Voltage-Max
1.9 V
Maximum Operating Temperature
+ 70 C
Maximum Clock Frequency
500 MHz
操作温度
0 to 85 °C
内存大小
144 Mbit
电源电流-最大值
1.07 A
访问时间
0.45
组织结构
8 M x 18
记忆密度
144
GS81302T20E-500拓展信息
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