N/A

-

6 Weeks

YES

48

48

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS72116AGU-8I

131072 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

ASYNCHRONOUS

128KX16

1.2 mm

16

2097152 bit

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302QT10E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.26 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

YES

144

144

PLASTIC/EPOXY

未说明

无

GS4288C36L-25

8388608 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.1

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

8000000

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

36 b

8MX36

1.2 mm

36

22 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

YES

144

144

BGA

Commercial grade

300 MHz

UBGA

36 Bit

表面贴装

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

8000000

PLASTIC/EPOXY

未说明

无

GS4288C36L-33

8388608 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.1

0 to 95 °C

3A991.B.2.B

LLDRAM

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

36 Bit

8MX36

1.2 mm

36

22 Bit

288 Mbit

301989888 bit

300 MHz

Commercial

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

BGA-165

YES

165

165

36 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302T36GE-333I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

8.03

BGA

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

860 mA

Pipelined

4 M x 36

1.5 mm

36

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

QDR-II

N

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

0 C

1.9 V

+ 70 C

450 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS81302DT38E-450

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

0 to 85 °C

Tray

GS81302DT38E

无

3A991.B.2.B

SigmaQuad-II+

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

1.53 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

318 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302QT37E

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.44 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x17)

165

4 MWords

36 Bit

1.9 V

表面贴装

Tray

GS81302QT37

活跃

Volatile

GSI Technology Inc.

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302QT37GE-300I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144Mbit

2

SYNCHRONOUS

300 MHz

1.34 A

SRAM

Parallel

Pipelined

4 M x 36

1.5 mm

36

-

21 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

4M x 36

17 mm

15 mm

N/A

-

BGA-119

119

Commercial grade

200 MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

0 to 70 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

350 mA, 440 mA

7.5@Flow-Through/3@P

4 M x 36

SRAM

144

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R08GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

845 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

YES

119

119

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS81284Z18B-167V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

0 to 70 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

315 mA, 365 mA

8@Flow-Through/3.4@P

8 M x 18

1.99 mm

18

SRAM

144

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

N

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS81284Z18B-250

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

355 mA, 455 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mb

150994944 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

8000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8128418GB-200

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

0 to 70 °C

Tray

GS8128418GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

325 mA, 400 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

167 MHz

+ 70 C

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8128436GB-167

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.63

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8128436GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

4

SYNCHRONOUS

340 mA, 395 mA

8 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302QT10GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.275 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

-40 to 100 °C

Tray

GS81302T08E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

765 mA

0.45

16 M x 8

SRAM

144

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302QT19GE-200I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

200 MHz

FBGA

-40 to 100 °C

Tray

GS81302QT19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

885 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

12 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

10

0 C

3.6 V

+ 70 C

BGA,

网格排列

8000000

BGA

5.22

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

2.5 V

GS8128418B-250

无

70 °C

6.5 ns

未说明

PLASTIC/EPOXY

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8128418B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

355 mA, 455 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

YES

144

144

PLASTIC/EPOXY

未说明

无

GS4288C36L-24

8388608 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.1

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

8000000

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

36 b

8MX36

1.2 mm

36

22 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

BGA

5.33

GSI TECHNOLOGY

不推荐

RECTANGULAR

LBGA

1.8 V

GS81302D36GE-300

有

Commercial grade

300 MHz

FBGA

QDR

0 to 85 °C

Tray

GS81302D36GE

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

915 mA

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Bulk

GS81302R08GE

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

800 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

0 to 70 °C

Tray

GS8128418GB

SCD/DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

144 Mbit

2

355 mA, 455 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

YES

119

119

2.5, 3.3 V

SDR

FBGA

Compliant

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8128418B-250I

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

表面贴装

2.7, 3.6 V

18 Bit

8 MWords

Synchronous

2.3, 3 V

-40 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

390 mA, 490 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

无

N/A

-

6 Weeks

YES

44

44

GS71116AGP-7IT

65536 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.33

TSOP2

Industrial grade

3.3000 V

3 V

Asynchronous

16 Bit

3.6 V

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

7 ns

85 °C

有

-40 to 85 °C

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.15 mA

7

64KX16

3-STATE

1.2 mm

16

0.005 A

1

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

25 Weeks, 5 Days

BGA-119

YES

119

119

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS78132AB-12I

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

Asynchronous

256 kWords

32 Bit

表面贴装

+ 85 C

3.6 V

- 40 C

-40 to 85 °C

GS78132AB

e0

无

3A991.B.2.B

Asynchronous

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

8 Mbit

4

ASYNCHRONOUS

200 mA

12 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm