GSI Technology GS81302DT06E-500
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GS81302DT06E-500
2984-GS81302DT06E-500
存储器
BGA-165
大陆
立即发货

QDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS81302DT06E-500详情
GSI Technology GS81302DT06E-500重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Supplier Package
FBGA
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of I/O Lines
8 Bit
Maximum Operating Supply Voltage
1.9 V
Moisture Sensitive
有
Maximum Clock Frequency
500 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
1.9 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
10
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaQuad-II+
RoHS
N
Memory Types
QDR-II
操作温度
0 to 85 °C
系列
GS81302DT06E
包装
Tray
类型
SigmaQuad-II+
子类别
Memory & Data Storage
引脚数量
165
内存大小
144 Mbit
电源电流-最大值
1.26 A
访问时间
0.45
组织结构
16 M x 8
产品类别
SRAM
记忆密度
144
产品类别
SRAM
GS81302DT06E-500拓展信息
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