N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

Industrial grade

表面贴装

1.9 V

36 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

300 MHz

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302D36E

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

925 mA

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302DT11GE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.055 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

25 Weeks, 5 Days

BGA-119

YES

119

119

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS78132AB-12I

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

Asynchronous

256 kWords

32 Bit

表面贴装

+ 85 C

3.6 V

- 40 C

21

-40 to 85 °C

GS78132AB

e0

无

3A991.B.2.B

Asynchronous

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

8 Mbit

4

ASYNCHRONOUS

200 mA

12 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

N/A

-

6 Weeks

YES

44

44

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.33

TSOP2

Industrial grade

3.3000 V

3 V

Asynchronous

16 Bit

3.6 V

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

7 ns

85 °C

有

GS71116AGP-7IT

65536 words

-40 to 85 °C

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

ASYNCHRONOUS

0.15 mA

7

64KX16

3-STATE

1.2 mm

16

0.005 A

1

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

6 Weeks

YES

48

48

8 ns

70 °C

有

GS74108AGX-8

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

512000

PLASTIC/EPOXY

未说明

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

N/A

-

N/A

-

BGA-165

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

150 MHz

+ 70 C

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 32

N/A

-

BGA-165

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

150 MHz

+ 85 C

GS881E18CD

9 Mbit

140 mA, 150 mA

7.5 ns

512 k x 18

N/A

-

BGA-165

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS881E18CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

140 mA, 150 mA

7.5 ns

512 k x 18

18 b

SRAM

9 Mb

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302TT37GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

QDR-II

Compliant

Military grade

300 MHz

BGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS81302Q07E

SigmaQuad-II+ B2

Memory & Data Storage

1.8 V

144 Mbit

Pipelined

16 M x 8

24 Bit

SRAM

144 Mbit

Military

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302D19E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

QDR-II

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.185 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

500 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673ED18BGK-500

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Commercial grade

500 MHz

BGA

QDR

1.3500 V

Synchronous

4 MWords

18 Bit

表面贴装

有

0 to 70 °C

Tray

GS8673ED18BGK

3A991.B.2.B

SigmaQuad-IIIe B4

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

1

SYNCHRONOUS

1.77 A

1 Gb/s

Pipelined

4 M x 18

2.3 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

N/A

-

12 Weeks

BGA-260

YES

260

260

1.3 V

SMD/SMT

Parallel

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

85 °C

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.73

GS8673ED36BGK-625

有

Commercial grade

625/400 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

625 MHz

+ 85 C

1.4 V

0 C

0 to 70 °C

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.97 A

Pipelined

2 M x 36

2.3 mm

36

19 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.37 ns

有

GS81302D20GE-450I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

-40 to 100 °C

GS81302D20GE

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

144 Mbit

2

SYNCHRONOUS

1.27 A

Pipelined

8 M x 18

1.5 mm

18

21 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

12 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302S18E-375I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Bulk

GS81302S18E

无

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.005 A

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

10 Weeks

YES

260

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.73

Commercial grade

675 MHz

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

Non-Compliant

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673EQ36BGK-675

0 to 70 °C

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

2

SYNCHRONOUS

Pipelined

2MX36

2.3 mm

36

20 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

N/A

-

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8128418GB-167IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

167 MHz

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8128418GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

350 mA, 400 mA

8 ns

8 M x 18

1.99 mm

18

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

21 In Stock

-

TQFP-100

SDR

有

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS880F18CGT

流过

Memory & Data Storage

9 Mbit

145 mA

5.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

Compliant

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

GS881E18CD

70 °C

0 °C

9 Mbit

2

120 mA, 130 mA

7.5 ns

512 k x 18

18 b

9 Mb

无

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

有

GS8182R36BGD-167I

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

0.732199 oz

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342T18BGD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.86

BGA

Industrial grade

333 MHz

-40 to 100 °C

Tray

GS8342T18BGD

3A991.B.2.B

SigmaDDR-II B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

525 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.205 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm