N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302DT11E-450I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302DT11E

无

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.185 A

Pipelined

16 M x 9

1.5 mm

9

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SigmaQuad-II

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302D36E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200 MHz

FBGA

-40 to 85 °C

GS81284Z18GB

144 Mbit

2

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

GS81302T08GE

144 Mbit

605 mA

0.45

16 M x 8

144

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T36E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

850 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R08E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302DT38E-400I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

400 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302DT38E

无

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.41 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R08E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

595 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

表面贴装

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS81302D09GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

995 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

6 Weeks

BGA-48

YES

48

48

256 kWords

16 Bit

3.6 V

表面贴装

有

+ 85 C

3.6 V

- 40 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

256000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

12 ns

85 °C

有

GS74117AGX-12I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.7

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

-40 to 85 °C

GS74117AGX

e1

有

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

4 Mbit

1

ASYNCHRONOUS

100 mA

12 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.02 A

4194304 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

10 mm

6 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D36E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302T36GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

790 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

595 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D18E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

995 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

375 MHz

FBGA

表面贴装

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

845 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T36GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

780 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mb

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS88236CD-200I

262144 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

Tray

GS88236CD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

256 k x 36

1.4 mm

36

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

TSOP-44

44

TSOP2

3.3000 V

3 V

16 Bit

3.6 V

+ 70 C

3.6 V

0 C

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TSOP2, TSOP44,.46,32

有

GS71116AGP-7

活跃

GSI TECHNOLOGY

0 to 70 °C

GS71116AGP

有

3A991.B.2.B

Asynchronous

8542.32.00.41

Memory & Data Storage

compliant

1 Mbit

145 mA

7

64 k x 16

SRAM

1

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS81302DT20GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

8 M x 18

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Commercial grade

250 MHz

FBGA

1.8000 V

Synchronous

8 MWords

18 Bit

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

0 to 85 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

595 mA

0.45

8 M x 18

SRAM

144

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.7 V

SMD/SMT

Parallel

16777216 words

1.8 V

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302QT07GE-250

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

1.9 V

8 Bit

Synchronous

1.7 V

1.8000 V

FBGA

250 MHz

250 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

1.06 A

0.45

16 M x 8

1.5 mm

8

144

PARALLEL

QDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

0 to 70 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

340 mA, 395 mA

8 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM