N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302DT06GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302QT37GE-200

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

200 MHz

FBGA

1.8000 V

36 Bit

200 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

930 mA

0.45

4 M x 36

1.5 mm

36

144

PARALLEL

QDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

318 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

318 MHz

FBGA

-40 to 100 °C

GS81302QT10E

144 Mbit

2

1.275 A

Pipelined

16 M x 9

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

QDR-II

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

-40 to 100 °C

Tray

GS81302QT37GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

1.14 A

0.45

4 M x 36

SRAM

144

SRAM

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

-40 to 85 °C

Tray

GS8128436GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302R09GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

765 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Compliant

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302T09E

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

605 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

DDR-II

Details

SigmaDDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T09GE

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

690 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T09E

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

690 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

6 Weeks

BGA-48

YES

48

48

5.19

GSI TECHNOLOGY

活跃

RECTANGULAR

TFBGA

3.3 V

65536 words

GS71116AGU-8I

有

85 °C

8 ns

未说明

-40 °C

BGA48,6X8,30

PLASTIC/EPOXY

64000

3

GRID ARRAY, THIN PROFILE, FINE PITCH

+ 85 C

3.6 V

- 40 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

BGA

GS71116AGU

e1

有

3A991.B.2.B

Asynchronous

锡银铜

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

130 mA

8 ns

64 k x 16

3-STATE

1.2 mm

16

16 b

SRAM

1 Mb

0.005 A

1048576 bit

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D09GE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

890 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Compliant

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302T09E

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

765 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302DT06E

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R09E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

6 Weeks

TSOP-44

YES

44

44

16 Bit

3.6 V

表面贴装

+ 85 C

3.6 V

- 40 C

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

7 ns

85 °C

有

GS71116AGP-7I

3.3 V

TSOP2

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

TSOP2

Industrial grade

TSOP-II

3.3000 V

3 V

Asynchronous

64 kWords

-40 to 85 °C

GS71116AGP

e3

有

3A991.B.2.B

Asynchronous

纯哑光锡

8542.32.00.41

Memory & Data Storage

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

150 mA

7 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

18.41 mm

10.16 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

10

- 40 C

3.6 V

+ 85 C

200 MHz

有

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS81284Z36GB-200I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

-40 to 85 °C

Tray

GS81284Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

4

SYNCHRONOUS

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

318 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302QT07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.265 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R36GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

167 MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

0 to 70 °C

Tray

GS81284Z18GB

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

2

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T36E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

有

318 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

0.45 ns

85 °C

有

GS81302QT07GE-318

16777216 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

318 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

0 to 85 °C

Tray

GS81302QT07GE

3A991.B.2.B

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

OTHER

144 Mbit

2

SYNCHRONOUS

1.265 A

0.45

16 M x 8

1.5 mm

8

23 b

SRAM

144 Mb

144

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

Synchronous

8 Bit

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

FBGA

1.8000 V

0 to 85 °C

Tray

GS81302R08GE

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

755 mA

0.45

16 M x 8

22 b

SRAM

144 Mb

144

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302D36GE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

800 mA

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

1.7 V

10

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

DDR-II

N

SigmaDDR-II

GSI技术

GSI技术

Parallel

0 to 85 °C

Tray

GS81302T18E

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

690 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

6 Weeks

YES

48

48

-40 °C

未说明

10 ns

85 °C

有

GS72116AGU-10I

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

16 Bit

3.6 V

表面贴装

Compliant

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

-40 to 85 °C

e1

有

3A991.B.2.B

锡银铜

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 Bit

2 Mbit

2097152 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

无