GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS8161Z32DGD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS8161Z32DGD-150V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS8161Z32DGD			3A991.B.2.B	NBT				FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32	19 Bit	SRAM	18 Mbit		33554432 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8161E36DGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	- 40 C	2.7 V	+ 85 C	200 MHz	有	Industrial grade				表面贴装	2, 2.7 V	36 Bit	512 kWords	Synchronous	1.7, 2.3 V	1.8, 2.5 V	SDR	TQFP	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	18	-40 to 85 °C	Tray	GS8161E36DGT				DCD Pipeline/Flow Through						Memory & Data Storage													18 Mbit	4		225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36					SRAM	18 Mbit			Industrial							SRAM
GS8342TT19BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT19BGD				SigmaDDR-II+ B2						Memory & Data Storage													36 Mbit	1		515 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT20BD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT20BD				SigmaQuad-II+						Memory & Data Storage													36 Mbit	1		670 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8160Z36DGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	100	+ 100 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	,	有	GS8160Z36DGT-200IV	活跃	GSI TECHNOLOGY	5.78	Industrial grade			200 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	-40 to 85 °C	Tray	GS8160Z36DGT				NBT						Memory & Data Storage								compliant					18 Mbit	4		225 mA, 230 mA	6.5 ns		512 k x 36					SRAM	18 Mbit			Industrial							SRAM
GS880Z18CGT-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	SDR	Details	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	36	0 C	3.6 V	+ 70 C	LQFP,	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	未说明	5 ns	70 °C	有	GS880Z18CGT-300	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	QFP	Commercial grade	200@Flow-Through/300@Pipelined MHz	TQFP	SDR	0 to 70 °C	Tray	GS880Z18CGT	e3	有	3A991.B.2.B	NBT	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		COMMERCIAL	9 Mbit	1	SYNCHRONOUS	150 mA, 205 mA	5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	18 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS832236AGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Synchronous	36 Bit	2.7, 3.6 V	有	150 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	7.5 ns	70 °C	有	GS832236AGD-150	150 MHz	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	133@Flow-Through/150@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	0 to 85 °C	Tray	GS832236AGD	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit		SYNCHRONOUS	190 mA, 200 mA	7.5@Flow-Through/3.8		1 M x 36	3-STATE	1.4 mm	36		SRAM		0.03 A	36		PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS840Z18CGT-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	TQFP-100	YES	100	100	Details	SDR	QFP	5.39	GSI TECHNOLOGY	活跃	RECTANGULAR	LQFP	2.5 V	262144 words	250 MHz	GS840Z18CGT-250	有	70 °C	5.5 ns	未说明	QFP100,.63X.87	PLASTIC/EPOXY	256000	FLATPACK, LOW PROFILE	LQFP, QFP100,.63X.87	有	250 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS840Z18CGT			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3,3.3 V	COMMERCIAL	4 Mbit		SYNCHRONOUS	145 mA, 180 mA	5.5 ns		256 k x 18	3-STATE	1.6 mm	18		SRAM		0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	3.14 V	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8672D20BE-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	QDR-II	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	0.45 ns	70 °C	无	GS8672D20BE-500	500 MHz	4194304 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.92	BGA	有	500 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N		Tray	GS8672D20BE			3A991.B.2.B	SigmaQuad-II+ B4				管道结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5,1.8 V	COMMERCIAL	72 Mbit		SYNCHRONOUS	1.61 A			4 M x 18	3-STATE	1.5 mm	18		SRAM			72		PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8342T18BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	300 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				300 MHz	FBGA	DDR	0 to 85 °C																									36 Mbit	1		450 mA		Pipelined	2 M x 18				21 Bit		36 Mbit			Commercial
GS8321E18AD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165		133@Flow-Through/150@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	Synchronous	18 Bit	2.7, 3.6 V	有	150 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR			-40 to 100 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through						Memory & Data Storage													36 Mbit			195 mA, 210 mA	7.5@Flow-Through/3.8		2 M x 18					SRAM			36								SRAM
GS8182Q08BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8182Q08BGD				SigmaQuad-II						Memory & Data Storage													18 Mbit	2		860 mA		Pipelined	2 M x 8				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342D07BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	N	DDR	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	8 Bit	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 70 °C	Tray	GS8342D07BD				SigmaQuad-II+ B4						Memory & Data Storage													36 Mbit	2		530 mA		Pipelined	4 M x 8				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342QT10BGD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	15	- 40 C	1.9 V	+ 85 C	200 MHz	有	Industrial grade				200 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	DDR	Details	SigmaQuad-II+	GSI技术	GSI技术	Parallel	SMD/SMT	-40 to 100 °C	Tray	GS8342QT10BGD				SigmaQuad-II+ B2						Memory & Data Storage													36 Mbit	2		565 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8162Z36DB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	BGA,	网格排列	512000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	无	GS8162Z36DB-200	524288 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	有	200 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR		Tray	GS8162Z36DB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS	210 mA	6.5 ns		512 k x 36		1.99 mm	36		SRAM			18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS88018CGT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	6.5 ns	85 °C	有	GS88018CGT-200I	200 MHz	524288 words	2.5 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	4.83	QFP	153.8@Flow-Through/200@Pipelined MHz	TQFP	2.5, 3.3 V	2.3, 3 V	Synchronous	18 Bit	2.7, 3.6 V	200 MHz	+ 85 C	-40 to 85 °C			e3	有	3A991.B.2.B		纯哑光锡			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	SRAMs	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit		SYNCHRONOUS	150 mA, 175 mA	6.5@Flow-Through/3@P		512 k x 18	3-STATE	1.6 mm	18	19 Bit			0.045 A	9		PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V		20 mm	14 mm
GS88236CGB-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	SDR	BGA,	网格排列	3	256000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS88236CGB-150	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	有	150 MHz	+ 70 C	3.6 V	0 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details		Tray	GS88236CGB	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	130 mA, 140 mA	7.5 ns		256 k x 36		1.77 mm	36		SRAM			9437184 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS880E36CGT-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	7.5 ns	85 °C	有	GS880E36CGT-150I	262144 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.61	QFP	有	150 MHz	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS880E36CGT	e3	有	3A991.B.2.B	DCD	纯哑光锡			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit		SYNCHRONOUS	150 mA, 160 mA	7.5 ns		256 k x 36	3-STATE	1.6 mm	36		SRAM		0.045 A	9437184 bit		PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8162Z18DGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	6.5 ns	85 °C	有	GS8162Z18DGB-200	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		OTHER	18 Mbit	2	SYNCHRONOUS	195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS88032CGT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	有	GS88032CGT-200I	262144 words	2.5 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.61	QFP	200 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	6.5 ns	85 °C			GS88032CGT	e3	有	3A991.B.2.B		纯哑光锡			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	SRAMs	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit		SYNCHRONOUS	160 mA, 190 mA	6.5 ns		256 k x 32	3-STATE	1.6 mm	32				0.045 A	8388608 bit		PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V		20 mm	14 mm
GS880F18CGT-7.5I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	SDR	2.7, 3.6 V	+ 85 C	72	Parallel	GSI技术	GSI技术	7.5 ns	GS880F18CGT-7.5I	133 MHz	GSI TECHNOLOGY	TQFP	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	表面贴装	有	3.6 V	- 40 C	2.3 V	SMD/SMT	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	85 °C	有	2.5 V	LQFP	RECTANGULAR	活跃	5.36	QFP	Industrial grade	133.3 MHz	-40 to 85 °C	Tray	GS880F18CGT	e3	有	3A991.B.2.B	流过	纯哑光锡	85 °C	-40 °C	FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit	2	SYNCHRONOUS	140 mA	7.5 ns	Flow-Through	512 k x 18	3-STATE	1.6 mm	18	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	20 mm	14 mm	无
GS816132DGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS816132DGD-150	524288 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.31	BGA	有	150 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS816132DGD			3A991.B.2.B	Pipeline/Flow Through		70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	180 mA, 190 mA	7.5 ns		512 k x 32		1.4 mm	32	19 b	SRAM	18 Mb		16777216 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm	无
GS8161Z18DGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS8161Z18DGD-150	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	有	150 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR		Tray	GS8161Z18DGD			3A991.B.2.B	NBT		70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	170 mA, 180 mA	7.5 ns		1 M x 18		1.4 mm	18	20 b	SRAM	18 Mb		18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm	无
GS8160E36DGT-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS8160E36DGT-150I	524288 words	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.38	QFP	有	150 MHz	+ 100 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details		Tray	GS8160E36DGT			3A991.B.2.B	Pipeline/Flow Through		100 °C	-40 °C	ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns		512 k x 36		1.6 mm	36	20 b	SRAM	18 Mb		18874368 bit		PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm	无
GS8342Q09BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II	Details	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	9 Bit	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342Q09BGD				SigmaQuad-II		100 °C	-40 °C			Memory & Data Storage		1.8 V											36 Mbit	2		895 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM			无