GSI Technology GS8161E36DGT-200IV
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GS8161E36DGT-200IV
2984-GS8161E36DGT-200IV
存储器
TQFP-100
大陆
立即发货

Cache SRAM, 512KX36, 6.5ns, CMOS, PQFP100, TQFP-100
1最小包装量--
GS8161E36DGT-200IV详情
GSI Technology GS8161E36DGT-200IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TQFP-100
引脚数
100
Mounting
表面贴装
Maximum Operating Supply Voltage
2, 2.7 V
Number of I/O Lines
36 Bit
Number of Words
512 kWords
Timing Type
Synchronous
Minimum Operating Supply Voltage
1.7, 2.3 V
Typical Operating Supply Voltage
1.8, 2.5 V
Data Rate Architecture
SDR
Supplier Package
TQFP
Memory Types
SDR
RoHS
Details
Tradename
SyncBurst
Brand
GSI技术
Manufacturer
GSI技术
Interface Type
Parallel
Mounting Styles
SMD/SMT
Supply Voltage-Min
1.7 V
Factory Pack QuantityFactory Pack Quantity
18
Minimum Operating Temperature
- 40 C
Supply Voltage-Max
2.7 V
Maximum Operating Temperature
+ 85 C
Maximum Clock Frequency
200 MHz
Moisture Sensitive
有
Usage Level
Industrial grade
操作温度
-40 to 85 °C
包装
Tray
系列
GS8161E36DGT
类型
DCD Pipeline/Flow Through
子类别
Memory & Data Storage
内存大小
18 Mbit
端口的数量
4
电源电流-最大值
225 mA, 230 mA
访问时间
6.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 36
产品类别
SRAM
密度
18 Mbit
筛选水平
Industrial
产品类别
SRAM
GS8161E36DGT-200IV拓展信息
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