N/A

-

BGA-165

GSI技术

SigmaQuad-II

Details

DDR

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8182Q08BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

435 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

GSI技术

SigmaQuad-I

N

DDR

有

200 MHz

+ 70 C

2.6 V

0 C

18

2.4 V

SMD/SMT

Parallel

GSI技术

Tray

GS8180QV36BD

SigmaQuad

70 °C

0 °C

Memory & Data Storage

2.5 V

18 Mbit

2

512 k x 36

18 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342S09BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

460 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

1.45 A

2 M x 36

21 b

72 Mb

72

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SyncBurst

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

70 °C

有

GS88018CGT-250

250 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

QFP

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS88018CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

145 mA, 180 mA

5.5 ns

512 k x 18

3-STATE

1.6 mm

18

19 b

SRAM

9 Mb

0.025 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182S18BD-250

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

BGA

5.19

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA,

Tray

GS8182S18BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

420 mA

1 M x 18

1.4 mm

18

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D09BGD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

365 mA

2 M x 9

19 b

SRAM

18 Mb

SRAM

无

N/A

-

TSOP-44

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

GS74116AGP

Asynchronous

Memory & Data Storage

4 Mbit

90 mA

12 ns

256 k x 16

SRAM

SRAM

N/A

-

YES

100

1048576 words

2.5 V

LQFP

RECTANGULAR

Rochester Electronics LLC

接触制造商

ROCHESTER ELECTRONICS LLC

5.66

Compliant

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

7.5 ns

70 °C

GS8160Z18BGT-150

3A991.B.2.A

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

unknown

R-PQFP-G100

COMMERCIAL

2

SYNCHRONOUS

1MX18

1.6 mm

18

20 b

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

无

N/A

-

YES

100

262144 words

2.5 V

LQFP

RECTANGULAR

Rochester Electronics LLC

接触制造商

ROCHESTER ELECTRONICS LLC

5.64

Non-Compliant

LQFP,

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

6.5 ns

70 °C

GS88036BGT-200

3A991.B.2.A

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

unknown

R-PQFP-G100

COMMERCIAL

4

SYNCHRONOUS

256KX36

1.6 mm

36

18 b

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

0 C

0.059966 oz

3.6 V

+ 70 C

150 MHz

有

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS880Z36CGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

表面贴装

2.7, 3.6 V

0 to 70 °C

Tray

GS880Z36CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

QDR-II

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS8672Q37BE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.62 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

SigmaDDR-II+

N

DDR-II

有

633 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8672T20BE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.5 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

SigmaQuad-II

N

DDR

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8342D18BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

460 mA

2 M x 18

SRAM

36

SRAM

N/A

-

BGA-165

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Tray

GS8182S36BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

605 mA

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

Compliant

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Bulk

85 °C

-40 °C

18 Mbit

4

200 mA, 210 mA

7.5 ns

512 k x 32

19 b

18 Mb

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS816118DD

同步突发

Memory & Data Storage

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8161E18DD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8161E18DD

3A991.B.2.B

DCD Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Bulk

100 °C

-40 °C

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

165

18

0 C

2.7 V

+ 70 C

150 MHz

有

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

0 to 85 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

4 M x 9

21 b

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

1

Pipelined

20 Bit

36 Mbit

Commercial

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8160E32DGT-150I

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

QFP

有

150 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS8160E32DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Industrial grade

350 MHz

FBGA

36 Bit

表面贴装

1 MWords

Synchronous

1.8000 V

DDR

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

DDR

-40 to 100 °C

Tray

GS8342S36BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

860 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM