N/A

-

TQFP-100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

Tray

GS816132DGT

同步突发

Memory & Data Storage

18 Mbit

245 mA, 265 mA

5.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

36

Bulk

GS816136DD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

210 mA

6.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-260

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR

Non-Compliant

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

Tray

GS8673ET36BK

SigmaDDR-IIIe B2

Memory & Data Storage

72 Mbit

2.03 A

2 M x 36

SRAM

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

300 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342Q18BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

BGA

Commercial grade

300 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8342Q18BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

775 mA

450 ps

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

表面贴装

TQFP-100

100-TQFP (20x14)

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS840Z

活跃

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

-40°C ~ 100°C (TJ)

Tray

GS840Z18CGT

NBT Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

4 Mbit

250 MHz

165 mA, 200 mA

5.5 ns

SRAM

Parallel

256 k x 18

-

SRAM

SRAM

256K x 18

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

340 mA, 395 mA

8 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-119

YES

119

119

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

70 °C

无

GS81284Z18B-200V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.03

BGA

7.5 ns

未说明

PLASTIC/EPOXY

8000000

网格排列

BGA,

Commercial grade

200 MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 70 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

325 mA, 400 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

表面贴装

BGA-119

119

119-FPBGA (22x14)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS8128418

活跃

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

-40 to 85 °C

Tray

GS8128418GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

144 Mbit

2

250 MHz

390 mA, 490 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

8 M x 18

-

23 Bit

SRAM

144 Mbit

Industrial

SRAM

8M x 18

N/A

-

BGA-165

165

SigmaQuad-II

N

DDR

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662D36BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

730 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

YES

100

1048576 words

2.5 V

LQFP

RECTANGULAR

Rochester Electronics LLC

接触制造商

ROCHESTER ELECTRONICS LLC

5.66

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

5.5 ns

70 °C

GS8160Z18BGT-250

3A991.B.2.A

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

unknown

R-PQFP-G100

COMMERCIAL

SYNCHRONOUS

1MX18

1.6 mm

18

18874368 bit

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

N/A

-

YES

100

100

QFP

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

8.5 ns

85 °C

有

GS832032GT-133I

133 MHz

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.21 mA

1MX32

3-STATE

1.6 mm

32

0.08 A

33554432 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS864236B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

9 b

24 b

288 Mb

400 MHz

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

9 b

24 b

288 Mb

533 MHz

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

9 b

24 b

288 Mb

400 MHz

无

N/A

-

12 Weeks

BGA-260

YES

260

260

表面贴装

有

675 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

无

GS8673ED18BK-675I

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

Industrial grade

675/450 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

4 MWords

18 Bit

1.4 V

-40 to 85 °C

Tray

GS8673ED18BK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.26 A

1.35 Gb/s

Pipelined

4 M x 18

2.3 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

375 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302D09E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

450 MHz

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

未说明

0.37 ns

有

GS81302D38GE-450

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

表面贴装

1.9 V

36 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

0 to 85 °C

Tray

GS81302D38GE

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

144 Mbit

2

SYNCHRONOUS

1.53 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

QDR-II

Military grade

300 MHz

BGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS8662Q37BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.07 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

36 Bit

1.4 V

表面贴装

有

500 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673EQ36BGK-500I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

500 MHz

BGA

QDR

1.3500 V

1.25 V

Synchronous

2 MWords

-40 to 85 °C

Tray

GS8673EQ36BGK

3A991.B.2.B

SigmaQuad-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

1

SYNCHRONOUS

2.44 A

Pipelined

2 M x 36

2.3 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302D07GE-400I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

-40 to 100 °C

GS81302D07GE

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.065 A

Pipelined

16 M x 8

1.5 mm

8

22 Bit

144 Mbit

134217728 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

8 Weeks

YES

165

165

2000000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

有

GS8182R09BGD-167

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

LBGA,

GRID ARRAY, LOW PROFILE

3

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

2MX9

1.4 mm

9

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

9 b

24 b

288 Mb

533 MHz

无