N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q19BGE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.19 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182S09BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

355 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342D10BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672D38BE-400

400 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

Tray

GS8672D38BE

3A991.B.2.B

SigmaQuad-II+ B4

85 °C

0 °C

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.86 A

2 M x 36

3-STATE

1.5 mm

36

19 b

SRAM

72 Mb

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8642Z72GC-167IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.5

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8642Z72GC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS880F32CGT

流过

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

185 mA

5 ns

Flow-Through

256 k x 32

18 Bit

SRAM

8 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342DT19BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 85 °C

Tray

GS8342D38BGD

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

20 Bit

36 Mbit

Commercial

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

5 ns

85 °C

有

GS880E18CGT-300I

300 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.6

QFP

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q19BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

565 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

Bulk

GS8321E32AD

85 °C

0 °C

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672D37BGE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.86 A

2 M x 36

19 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8342D06BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

785 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q37BGE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.86 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342QT37BD-200I

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

200 MHz

-40 to 100 °C

Bulk

GS8342QT37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

650 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8161Z36DD-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Bulk

GS8161Z36DD

3A991.B.2.B

NBT

100 °C

-40 °C

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

DDR

SigmaDDR-II+

GSI技术

GSI技术

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342T07BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

300 MHz

FBGA

0 to 85 °C

Bulk

GS8342T07BGD

3A991.B.2.B

SigmaDDR-II+ B2

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

450 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.185 A

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT38BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

860 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 85 C

3.6 V

- 40 C

21

-40 to 100 °C

Bulk

GS8162Z36DGB

NBT Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Bulk

GS8672T38BE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.59 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342S36BGD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

Bulk

GS8342S36BGD

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

860 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.23 A

37748736 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Bulk

GS8672D18BGE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.12 A

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

6.5 ns

70 °C

BGA

5.13

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

2.5 V

200 MHz

GS8322Z18AB-200

无

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS8322Z18AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D19BD

SigmaQuad II+

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

570 mA

1 M x 18

18 b

SRAM

18 Mb

SRAM

无