GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS8342T10BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342T10BD-300	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.37	BGA	Commercial grade	300 MHz	FBGA	0 to 85 °C	Tray	GS8342T10BD	e0		3A991.B.2.B	SigmaDDR-II+ B2	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	450 mA		Pipelined	4 M x 9	3-STATE	1.4 mm	9	21 Bit	SRAM	36 Mbit	0.185 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS88218CD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	5 ns	70 °C	无	GS88218CD-300	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	Commercial grade	200@Flow-Through/300@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 70 °C	Tray	GS88218CD	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	9 Mbit	2	SYNCHRONOUS	150 mA, 205 mA	5 ns	Flow-Through/Pipelined	512 k x 18		1.4 mm	18	19 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8161E36DGD-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	150 MHz	+ 85 C	2.7 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	-40 to 85 °C																						18 Mbit	4		195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit		18 Mbit			Industrial
GS8321Z36AGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	未说明	85 °C	有	GS8321Z36AGD-200	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8321Z36AGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	4	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36		1.4 mm	36	20 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8182S36BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Details	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS8182S36BGD-300I	524288 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.15	BGA	有	300 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II		Tray	GS8182S36BGD	e1	有	3A991.B.2.B	SigmaSIO DDR-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS	605 mA			512 k x 36		1.4 mm	36		SRAM			18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8161Z18DGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	-40 °C	PLASTIC/EPOXY	1000000	GRID ARRAY, LOW PROFILE	LBGA,	5.26	BGA	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	GSI TECHNOLOGY	活跃	GSI技术	RECTANGULAR	LBGA	2.5 V	1048576 words	GS8161Z18DGD-250I	有	85 °C	5.5 ns	未说明						3A991.B.2.B			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit		SYNCHRONOUS	230 mA, 250 mA	5.5 ns		1 M x 18		1.4 mm	18					18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V		15 mm	13 mm
GS8342T09BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T09BD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		395 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT11BGD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT11BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		670 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8182D36BD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR	Commercial grade				375 MHz	FBGA	QDR	1.8000 V	Synchronous	512 kWords	36 Bit	表面贴装	有	375 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	0 to 70 °C	Tray	GS8182D36BD				SigmaQuad-II				Memory & Data Storage												18 Mbit	2		855 mA		Pipelined	512 k x 36					SRAM	18 Mbit			Commercial							SRAM
GS8342S09BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342S09BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		665 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342Q07BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342Q07BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		775 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT10BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342TT10BGD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		525 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8182D09BD-167	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	0.5 ns	70 °C	无	GS8182D09BD-167	2097152 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	167 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR		Tray	GS8182D09BD	e0	无	3A991.B.2.B	SigmaQuad-II	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS	315 mA			2 M x 9		1.4 mm	9		SRAM			18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8162Z18DGB-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	4.5 ns	85 °C	有	GS8162Z18DGB-333	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Commercial grade	222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		OTHER	18 Mbit	2	SYNCHRONOUS	240 mA, 285 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS816218DGD-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 100 °C	Tray	GS816218DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8342TT11BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342TT11BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Commercial grade	350 MHz	FBGA	0 to 85 °C	Tray	GS8342TT11BD	e0		3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	565 mA		Pipelined	4 M x 9	3-STATE	1.4 mm	9	21 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS832132AD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	32 Bit	2.7, 3.6 V	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	无	GS832132AD-250	250 MHz	1048576 words	2.5 V	LBGA	RECTANGULAR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	5.5 ns	85 °C	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	Synchronous	0 to 85 °C	Tray	GS832132AD			3A991.B.2.B	Pipeline/Flow Through		PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	OTHER	36 Mbit		SYNCHRONOUS	230 mA, 285 mA	5.5@Flow-Through/2.5		1 M x 32	3-STATE	1.4 mm	32		SRAM		0.03 A	36	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8342T19BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	Synchronous	18 Bit	1.9 V	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR				1.8000 V	0 to 85 °C	Tray	GS8342T19BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit			515 mA	0.45		2 M x 18					SRAM			36								SRAM
GS8342QT19BGD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	200 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	200 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	LBGA, BGA165,11X15,40	BGA	5.22	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	200 MHz	GS8342QT19BGD-200I	有	85 °C	0.45 ns	未说明	-40 °C	BGA165,11X15,40	PLASTIC/EPOXY	2000000	3	GRID ARRAY, LOW PROFILE	Industrial grade	-40 to 100 °C	Tray	GS8342QT19BGD	e1	有	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	565 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342T37BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T37BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		570 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342DT11BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				表面贴装	1.9 V	9 Bit	4 MWords	Synchronous	1.7 V	1.8000 V	QDR	FBGA	400 MHz	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342DT11BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	2		705 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT06BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342TT06BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		575 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342D07BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	表面贴装	1.9 V	8 Bit	4 MWords	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342D07BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		540 mA		Pipelined	4 M x 8				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342DT07BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	Synchronous	4 MWords	8 Bit	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	85 °C	无	GS8342DT07BD-333	333 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Commercial grade	333 MHz	FBGA	QDR	1.8000 V	0 to 85 °C	Tray	GS8342DT07BD	e0	无	3A991.B.2.B	SigmaQuad-II+ B4	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	OTHER	36 Mbit	2	SYNCHRONOUS	605 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	20 Bit	SRAM	36 Mbit		33554432 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8182S08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Details	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS8182S08BGD-250I	2097152 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	250 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II		Tray	GS8182S08BGD	e1	有	3A991.B.2.B	SigmaSIO DDR-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS	430 mA			2 M x 8		1.4 mm	8		SRAM			16777216 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm