N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

无

GS8322Z18AB-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8322Z18AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

235 mA, 275 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T08BD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

515 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

200@Flow-Through/300@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

-40 to 85 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

9 Mbit

170 mA, 225 mA

5@Flow-Through/2.5@P

512 k x 18

SRAM

9

SRAM

N/A

-

100

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

Industrial grade

TQFP

SDR

1.8, 2.5 V

-40 to 100 °C

4

Flow-Through/Pipelined

20 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

555 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

18

- 40 C

2.7 V

+ 85 C

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS816236DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q36BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

BGA

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8342Q36BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

1.065 A

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.245 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

1 MWords

36 Bit

-40 to 100 °C

36 Mbit

2

685 mA

Pipelined

1 M x 36

18 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS816136DGD

同步突发

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342Q18BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

945 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q08BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8322Z36AGD

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

153.8@Flow-Through/200@Pipelined MHz

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

21

- 40 C

2.7 V

+ 85 C

200 MHz

有

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8162Z18DB-200IV

BGA

5.27

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

1.8 V

Industrial grade

表面贴装

2, 2.7 V

18 Bit

1 MWords

-40 to 100 °C

Tray

GS8162Z18DB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182S36BGD-200

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

Tray

GS8182S36BGD

e1

有

3A991.B.2.B

SigmaSIO DDR-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

435 mA

512 k x 36

1.4 mm

36

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

300 MHz

FBGA

1.8000 V

1.7 V

9 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

-40 to 100 °C

Tray

GS8342T10BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

460 mA

0.45

4 M x 9

SRAM

36

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS88118CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA

5.25

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

GS816218DD-250IV

无

85 °C

5.5 ns

未说明

-40 °C

PLASTIC/EPOXY

1000000

GRID ARRAY, LOW PROFILE

LBGA,

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 100 °C

Tray

GS816218DD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

350 MHz

有

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8342DT06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

- 40 C

2.7 V

+ 85 C

200 MHz

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8161Z18DGD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS8161Z18DGD

3A991.B.2.B

NBT

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

-40 to 100 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8162Z18DGB-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS832032AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

SRAM

36 Mbit

Commercial

SRAM

N/A

-

100

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Commercial grade

0 to 70 °C

2

Flow-Through

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS816136DGD

同步突发

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM