N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182S18BGD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

525 mA

1 M x 18

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

133@Flow-Through/150@Pipelined MHz

-40 to 100 °C

Bulk

GS8321E32AGD

100 °C

-40 °C

36 Mbit

4

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342R18BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D09BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

485 mA

2 M x 9

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

-40 to 100 °C

Tray

GS816236DGB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

600 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q36BGE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.31 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

735 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

515 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Bulk

GS8161Z18DGD

100 °C

-40 °C

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

5 ns

85 °C

有

GS880E18CGT-300I

300 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.6

QFP

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342DT19BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 85 °C

Tray

GS8342D38BGD

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

20 Bit

36 Mbit

Commercial

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS880F32CGT

流过

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

185 mA

5 ns

Flow-Through

256 k x 32

18 Bit

SRAM

8 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8342D37BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

775 mA

Pipelined

1 M x 36

18 b

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

GSI TECHNOLOGY

5.22

BGA

GS8342D38BGD-400

有

70 °C

0.45 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

1000000

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

Commercial grade

400 MHz

FBGA

0 to 70 °C

Tray

GS8342D38BGD

3A991.B.2.B

SigmaQuad-II+

70 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

905 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q19BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

565 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

1

Pipelined

19 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 70 °C

Tray

GS8342D38BGD

SigmaQuad-II+

70 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

785 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Compliant

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

85 °C

-40 °C

1.8 V

18 Mbit

2

605 mA

2 M x 8

20 b

18 Mb

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q19BGE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.19 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无