GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	终端数量																																															操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	引脚数量	JESD-30代码	资历状况	电源电压-最大值(Vsup)	电源	温度等级	电源电压-最小值(Vsup)	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	产品类别	长度	宽度
GS816236DGB-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	-40 to 100 °C	Tray	GS816236DGB				Pipeline/Flow Through				Memory & Data Storage								119							18 Mbit	4		290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial					SRAM
GS8161Z32DD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	N	SDR				有	250 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS8161Z32DD				NBT				Memory & Data Storage															18 Mbit			230 mA, 250 mA	5.5 ns		512 k x 32					SRAM									SRAM
GS8322Z36AGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	NBT SRAM	Details	SDR	Commercial grade				FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 70 C	3.6 V	0 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	0 to 85 °C	Tray	GS8322Z36AGD				NBT Pipeline/Flow Through				Memory & Data Storage								165							36 Mbit	4		260 mA, 345 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36					SRAM	36 Mbit			Commercial					SRAM
GS8162Z18DB-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	无	GS8162Z18DB-200IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	-40 to 100 °C	Tray	GS8162Z18DB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	119	R-PBGA-B119	不合格	2 V		INDUSTRIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	22 mm	14 mm
GS8342S08BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342S08BGD				SigmaSIO DDR-II				Memory & Data Storage								165							36 Mbit	2		675 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS8182S36BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.15	BGA	250 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8182S36BD-250I	524288 words	1.8 V	LBGA				e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	165	R-PBGA-B165	不合格	1.9 V		INDUSTRIAL	1.7 V	18 Mbit		SYNCHRONOUS	525 mA			512 k x 36		1.4 mm	36					18874368 bit		PARALLEL		DDR SRAM			15 mm	13 mm
GS8342T08BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	GSI技术	SigmaCIO DDR-II	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	-40 to 100 °C	Tray	GS8342T08BD				SigmaDDR-II B2				Memory & Data Storage								165							36 Mbit	1		575 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS8342R18BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342R18BGD				SigmaDDR-II B4				Memory & Data Storage								165							36 Mbit	1		575 mA		Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS816218DD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	150 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	-40 to 100 °C																		165							18 Mbit	2		190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit		18 Mbit			Industrial
GS8321Z36AGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	0.345916 oz	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	6.5 ns	85 °C	有	GS8321Z36AGD-200IV	200 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.61	BGA	Industrial grade	-40 to 100 °C	Tray	GS8321Z36AGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	不合格	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS	235 mA, 270 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	1.7 V	SRAM	15 mm	13 mm
GS8161E18DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS8161E18DGT				DCD Pipeline/Flow Through				Memory & Data Storage								100							18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial					SRAM
GS8672T19BE-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8672T19BE-400I	400 MHz	4194304 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.92	BGA	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	LBGA, BGA165,11X15,40		Tray	GS8672T19BE			3A991.B.2.B	SigmaDDR-II+ B2			8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5,1.8 V	INDUSTRIAL	1.7 V	72 Mbit		SYNCHRONOUS	1.09 A			4 M x 18	3-STATE	1.5 mm	18		SRAM			72		PARALLEL	COMMON	标准SRAM	1.7 V	SRAM	17 mm	15 mm
GS8322Z18AGB-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	-40 to 100 °C		GS8322Z18AGB																119							36 Mbit	2		235 mA, 275 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit		36 Mbit			Industrial
GS8342S36BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342S36BD-400	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	400 MHz	FBGA	DDR	0 to 85 °C	Tray	GS8342S36BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	905 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.225 A	37748736 bit	Commercial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8672Q38BGE-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Details	QDR-II				有	500 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+		Tray	GS8672Q38BGE				SigmaQuad-II+ B2				Memory & Data Storage															72 Mbit			2.23 A			2 M x 36					SRAM			72						SRAM
GS8342D36BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	0.45 ns	70 °C	无	GS8342D36BD-250	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	250 MHz	FBGA	QDR	1.8000 V	0 to 85 °C	Tray	GS8342D36BD			3A991.B.2.B	SigmaQuad-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	675 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit	0.185 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8182D09BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel				300 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT			GS8182D09BD																							18 Mbit			495 mA			2 M x 9
GS8162Z36DB-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8162Z36DB				NBT Pipeline/Flow Through				Memory & Data Storage								119							18 Mbit	4		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
GS8342Q10BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	GSI技术	SigmaQuad-II+	DDR	Industrial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	-40 to 100 °C	Tray	GS8342Q10BD				SigmaQuad-II+ B2				Memory & Data Storage								165							36 Mbit	2		675 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS88236CGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	BGA,	网格排列	3	256000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS88236CGB-200	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	有	200 MHz	+ 70 C	3.6 V	0 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS88236CGB	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	不合格	2.7 V		COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36		1.77 mm	36		SRAM			9437184 bit		PARALLEL		缓存SRAM		SRAM	22 mm	14 mm
GS88236CGB-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	Details	SDR				有	200 MHz	+ 85 C	3.6 V	- 40 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst		Tray	GS88236CGB				Pipeline/Flow Through				Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 36					SRAM									SRAM
GS8342TT37BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342TT37BGD-300I	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	300 MHz	FBGA	-40 to 100 °C	Tray	GS8342TT37BGD			3A991.B.2.B	SigmaDDR-II+ B2		PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	36 Mbit	1	SYNCHRONOUS	580 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS881Z32CD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	100	32 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LQFP,	FLATPACK, LOW PROFILE	256000	PLASTIC/EPOXY	未说明	5 ns	70 °C	无	GS881Z32CD-300	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	QFP	Commercial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	0 to 70 °C	Tray	GS881Z32CD	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	not_compliant	165	R-PQFP-G100	不合格	2.7 V		COMMERCIAL	2.3 V	9 Mbit	1	SYNCHRONOUS	165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 32		1.6 mm	32		SRAM	8 Mbit		8388608 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm
GS832118AD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	-40 to 100 °C	Tray	GS832118AD				Pipeline/Flow Through				Memory & Data Storage								165							36 Mbit	2		195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
GS8672Q19BGE-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Details	QDR-II				有	375 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+		Tray	GS8672Q19BGE				SigmaQuad-II+				Memory & Data Storage															72 Mbit			1.3 A			4 M x 18					SRAM			72						SRAM