N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

18 Mbit

2

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q19BGE

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.21 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8160E36DGT

DCD Synchronous Burst

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

YES

165

165

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.25

BGA

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5 ns

70 °C

无

GS816236DD-333V

524288 words

1.8 V

LBGA

0 to 85 °C

Bulk

3A991.B.2.B

85 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

4

SYNCHRONOUS

5@Flow-Through/3@Pip

512KX36

1.4 mm

36

19 Bit

18 Mb

18

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8342DT38BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.015 A

1 M x 36

18 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D36BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SigmaCIO DDR-II

Details

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342T08BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

395 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SMD/SMT

Parallel

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

无

GS832236AB-250I

250 MHz

1048576 words

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.12

BGA

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

250 mA, 305 mA

5.5@Flow-Through/2.5

1 M x 36

3-STATE

1.99 mm

36

0.04 A

36

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS881Z18CGT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.51

QFP

Industrial grade

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS881Z18CGT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 b

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

70 °C

无

GS832236AD-200

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T20BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.25 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT37BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

675 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

2.3 V

21

0 C

3.6 V

+ 70 C

333 MHz

有

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

N

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS816236DB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.9 V

1.7 V

SMD/SMT

SigmaQuad-II+

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

85 °C

无

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

5.21

BGA

400 MHz

+ 85 C

- 40 C

15

Parallel

GSI技术

GSI技术

DDR

0.45 ns

GS8342D11BD-400I

400 MHz

GSI TECHNOLOGY

有

Tray

GS8342D11BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

715 mA

4 M x 9

3-STATE

1.4 mm

9

SRAM

0.235 A

37748736 bit

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

FBGA

SDR

表面贴装

2.7, 3.6 V

18 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

有

400 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342S36BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342Q37BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342TT06BD-450

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

450 MHz

FBGA

0 to 85 °C

Tray

GS8342TT06BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

670 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 85 °C

Tray

GS816236DB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT19BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

460 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS8161Z18DGT-333V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

QFP

Commercial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

0 to 85 °C

Bulk

GS8342Q10BD

85 °C

0 °C

1.8 V

36 Mbit

2

775 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

Details

SigmaDDR-II

GSI技术

GSI技术

Parallel

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

DDR-II

Tray

GS8672T18BGE

SigmaDDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

800 mA

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

250 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182Q08BGD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

605 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342Q08BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

Pipelined

4 M x 8

21 b

SRAM

36 Mbit

Industrial

SRAM

无