GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS8321Z32AD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	32 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	无	GS8321Z32AD-150I	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Industrial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	-40 to 100 °C	Tray	GS8321Z32AD	e0	无	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格			36 Mbit	4	SYNCHRONOUS	210 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	1 M x 32		1.4 mm	32	20 Bit	SRAM	36 Mbit		33554432 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8321Z18AD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	表面贴装	有	150 MHz	+ 100 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	无	GS8321Z18AD-150I	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Industrial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	-40 to 100 °C	Tray	GS8321Z18AD	e0	无	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格			36 Mbit	2	SYNCHRONOUS	195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18		SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8161E32DD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 85 °C	Tray	GS8161E32DD				DCD Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8182Q08BGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8182Q08BGD				SigmaQuad-II				Memory & Data Storage												18 Mbit	2		595 mA		Pipelined	2 M x 8				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342T08BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T08BGD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		565 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8182Q09BD-133	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	0.5 ns	70 °C	无	GS8182Q09BD-133	2097152 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	133 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR		Tray	GS8182Q09BD	e0	无	3A991.B.2.B	SigmaQuad-II	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS	375 mA			2 M x 9		1.4 mm	9		SRAM			18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816236DB-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	BGA,	网格排列	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	无	GS816236DB-150V	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS816236DB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36		1.99 mm	36	19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342S08BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342S08BD-300I	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	300 MHz	FBGA	-40 to 100 °C	Tray	GS8342S08BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	540 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	0.21 A	33554432 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342S09BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	250 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				250 MHz	FBGA	DDR	-40 to 100 °C		GS8342S09BGD																				36 Mbit	2		470 mA		Pipelined	4 M x 9				21 Bit		36 Mbit			Industrial
GS8342R36BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	15	0 C	1.9 V	+ 70 C	333 MHz	有	Commercial grade				表面贴装	1.9 V	36 Bit	1 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	333 MHz	DDR	N	SigmaDDR-II	GSI技术	GSI技术	Parallel	SMD/SMT	0 to 85 °C	Tray	GS8342R36BD				SigmaDDR-II B4				Memory & Data Storage												36 Mbit	1		660 mA		Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS864272GC-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	72 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS864272GC-250IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.18	BGA	Industrial grade	153.8@Flow-Through/250@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS864272GC	e1	有	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B209	不合格		INDUSTRIAL	72 Mbit	8	SYNCHRONOUS	340 mA, 480 mA	6.5 ns	Flow-Through/Pipelined	1 M x 72		1.7 mm	72	20 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342Q09BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342Q09BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		785 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8321Z18AD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	85 °C	无	GS8321Z18AD-200	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	0 to 85 °C	Tray	GS8321Z18AD	e0	无	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18		SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8182S18BGD-167I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	Details	DDR	Industrial grade				167 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	18 Bit	1.9 V	表面贴装	有	167 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8182S18BGD				SigmaSIO DDR-II				Memory & Data Storage												18 Mbit	2		325 mA		Pipelined	1 M x 18				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8161Z18DGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	GSI技术	活跃	GSI TECHNOLOGY	5.26	BGA	250 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS8161Z18DGD-250	1048576 words	2.5 V	LBGA	RECTANGULAR			GS8161Z18DGD			3A991.B.2.B			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit		SYNCHRONOUS	210 mA, 230 mA	5.5 ns		1 M x 18		1.4 mm	18					18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V		15 mm	13 mm
GS880E18CGT-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	未说明	7.5 ns	70 °C	有	GS880E18CGT-150	QFP	5.6	GSI TECHNOLOGY	活跃	RECTANGULAR	LQFP	2.5 V	150 MHz	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	0 to 70 °C	Tray	GS880E18CGT	e3	有	3A991.B.2.B	DCD	纯哑光锡	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	COMMERCIAL	9 Mbit	2	SYNCHRONOUS	120 mA, 130 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	18 Bit	SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8342D09BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D09BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		530 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816218DD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	无	GS816218DD-200V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS816218DD			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8342T07BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	有	GS8342T07BGD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	350 MHz	FBGA	0 to 85 °C	Tray	GS8342T07BGD			3A991.B.2.B	SigmaDDR-II+ B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	565 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	0.21 A	33554432 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8672D19BE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	PLASTIC/EPOXY	-40 °C	0.45 ns	85 °C	GS8672D19BE-333I	4194304 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.84	BGA	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	4000000		Tray	GS8672D19BE			3A991.B.2.B	SigmaQuad-II+		管道结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit		SYNCHRONOUS	1.21 A			4 M x 18		1.5 mm	18		SRAM			72		PARALLEL		标准SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS816118DD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	2, 2.7 V	有	333 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5 ns	70 °C	无	GS816118DD-333V	1048576 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Commercial grade	200@Flow-Through/333@Pipelined MHz	FBGA	1.8, 2.5 V	1.7, 2.3 V	Synchronous	18 Bit	0 to 85 °C	Tray	GS816118DD			3A991.B.2.B	同步突发		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit		SYNCHRONOUS	220 mA, 280 mA	5@Flow-Through/3@Pip		1 M x 18		1.4 mm	18		SRAM			18	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8342T08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaCIO DDR-II	Details	DDR	Industrial grade				250 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	8 Bit	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342T08BGD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		405 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8160Z18DGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	200 MHz	+ 100 C	2.7 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	-40 to 100 °C		GS8160Z18DGT																				18 Mbit	2		210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit		18 Mbit			Industrial
GS881E32CGT-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	未说明	5 ns	70 °C	有	GS881E32CGT-300	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	QFP	Commercial grade	200@Flow-Through/300@Pipelined MHz	TQFP	SDR	0 to 70 °C	Tray	GS881E32CGT	e3	有	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		COMMERCIAL	9 Mbit	4	SYNCHRONOUS	165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 32		1.6 mm	32	18 Bit	SRAM	8 Mbit		8388608 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8162Z18DGB-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	Synchronous	2.3, 3 V	2.5, 3.3 V	SDR	FBGA	238@Flow-Through/375@Pipelined MHz	有	375 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	4.2 ns	85 °C	有	GS8162Z18DGB-375	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Commercial grade	表面贴装	2.7, 3.6 V	18 Bit	1 MWords	0 to 85 °C	Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		OTHER	18 Mbit	2	SYNCHRONOUS	250 mA, 320 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm