N/A

-

BGA-165

Compliant

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

1.28 A

2 M x 36

21 b

72 Mb

72

无

N/A

-

10 Weeks

BGA-165

YES

165

165

18 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

450 MHz

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342D20BGD-450

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

表面贴装

1.9 V

0 to 85 °C

Tray

GS8342D20BGD

3A991.B.2.B

SigmaQuad-II+

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.24 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q08BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

885 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS88136CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

17 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 85 °C

GS832218AD

36 Mbit

2

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D09BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

605 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 85 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS816032DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 32

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342S08BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

470 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4.5 ns

70 °C

有

GS8322Z36AGB-333

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

0 to 85 °C

Tray

GS8322Z36AGB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182D08BGD-200

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

Tray

GS8182D08BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

355 mA

2 M x 8

1.4 mm

8

SRAM

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

13 Weeks

TQFP-100

YES

100

100

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

85 °C

有

GS8320Z36AGT-250

250 MHz

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.31

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

0 to 85 °C

3A991.B.2.B

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

有

GS8321Z18AGD-250I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8321Z18AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

2

SYNCHRONOUS

235 mA, 275 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

无

GS8342DT11BD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

350 MHz

FBGA

0 to 85 °C

Tray

GS8342DT11BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mb

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

133.3@Flow-Through/150@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

150 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS882Z36CGB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5@Flow-Through/3.8

256 k x 36

SRAM

9

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT20BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T36BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

570 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8162Z18DGD-250V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaQuad-II

GSI技术

GSI技术

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

DDR

N

0 to 85 °C

Tray

GS8342Q08BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672D36BE-200I

200 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Tray

GS8672D36BE

3A991.B.2.B

SigmaQuad-II

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

1.12 A

2 M x 36

3-STATE

1.5 mm

36

SRAM

72

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

DDR

0 to 85 °C

36 Mbit

1

450 mA

Pipelined

4 M x 8

20 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS88118CD

9 Mbit

1

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

9 Mbit

Commercial

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342QT07BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

300 MHz

0 to 85 °C

Tray

GS8342QT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

775 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS880F36CGT-6.5

153 MHz

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

有

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS880F36CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM