GSI Technology GS8162Z18DB-333

包装/外壳

BGA-119

引脚数

119

Maximum Clock Rate

222.2@Flow-Through/333@Pipelined MHz

Supplier Package

FBGA

Data Rate Architecture

SDR

Typical Operating Supply Voltage

2.5, 3.3 V

Minimum Operating Supply Voltage

2.3, 3 V

Timing Type

Synchronous

Number of Words

1 MWords

Number of I/O Lines

18 Bit

Maximum Operating Supply Voltage

2.7, 3.6 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

333 MHz

Maximum Operating Temperature

+ 70 C

Supply Voltage-Max

3.6 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

21

Supply Voltage-Min

2.3 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

NBT SRAM

RoHS

N

Memory Types

SDR

Usage Level

Commercial grade

操作温度

0 to 85 °C

系列

GS8162Z18DB

包装

Tray

类型

NBT Pipeline/Flow Through

子类别

Memory & Data Storage

内存大小

18 Mbit

端口的数量

2

电源电流-最大值

240 mA, 285 mA

访问时间

4.5 ns

建筑学

Flow-Through/Pipelined

组织结构

1 M x 18

地址总线宽度

20 Bit

产品类别

SRAM

密度

18 Mbit

筛选水平

Commercial

产品类别

SRAM