GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8162Z36DB-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA,	网格排列	512000	PLASTIC/EPOXY	-40 °C	未说明	4.2 ns	85 °C	无	GS8162Z36DB-375I	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Industrial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	-40 to 100 °C	Tray	GS8162Z36DB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	290 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36		1.99 mm	36		SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8161Z18DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	Synchronous	1.7, 2.3 V	1.8, 2.5 V	SDR	TQFP	153.8@Flow-Through/200@Pipelined MHz	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS8161Z18DGT-200V	QFP	5.26	GSI TECHNOLOGY	活跃	RECTANGULAR	LQFP	1.8 V	Commercial grade	表面贴装	2, 2.7 V	18 Bit	1 MWords	0 to 85 °C	Tray	GS8161Z18DGT			3A991.B.2.B	NBT		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.6 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS8180QV36BD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	2.3 ns	85 °C	无	GS8180QV36BD-200I	524288 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.24	BGA	有	200 MHz	+ 85 C	2.6 V	- 40 C	18	2.4 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-I	DDR	LBGA,		Tray	GS8180QV36BD	e0	无	3A991.B.2.B	SigmaQuad	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS				512 k x 36		1.4 mm	36		SRAM			18874368 bit		PARALLEL		标准SRAM		2.6 V	2.4 V	SRAM	15 mm	13 mm
GS8161Z32DGD-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 100 °C	Tray	GS8161Z32DGD				NBT				Memory & Data Storage												18 Mbit	4		260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8342TT19BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT19BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		450 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT37BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	DDR	N	SigmaDDR-II+	GSI技术	GSI技术	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT37BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		660 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342D18BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D18BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		705 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342Q36BGD-357	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165				357 MHz	FBGA	1.8000 V	1.7 V	36 Bit	1.9 V	有	357 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade	0 to 85 °C	Tray	GS8342Q36BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit			1.145 A	0.45		1 M x 36				19 Bit	SRAM			36	Commercial							SRAM
GS8342TT10BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342TT10BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		525 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS841Z36CGT-166	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	TQFP-100	YES	100	100	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	128000	PLASTIC/EPOXY	QFP100,.63X.87	未说明	7 ns	70 °C	有	GS841Z36CGT-166	166 MHz	131072 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.52	QFP	有	166 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS841Z36CGT			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	COMMERCIAL	4 Mbit		SYNCHRONOUS	135 mA, 160 mA	7 ns		128 k x 36	3-STATE	1.6 mm	36		SRAM		0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS880Z18CGT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS880Z18CGT-200I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	4.88	QFP	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	TQFP	-40 to 85 °C	Tray	GS880Z18CGT	e3	有	3A991.B.2.B	NBT	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit	1	SYNCHRONOUS	150 mA, 175 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS816218DGD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	0 to 85 °C	Tray	GS816218DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342D07BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	Details	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	8 Bit	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342D07BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		615 mA		Pipelined	4 M x 8					SRAM	36 Mbit			Industrial							SRAM
GS8342T07BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	表面贴装	350 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	8 Bit	0 to 85 °C		GS8342T07BD																				36 Mbit	1		565 mA		Pipelined	4 M x 8				21 Bit		36 Mbit			Commercial
GS8342D37BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342D37BD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		785 mA		Pipelined	1 M x 36				18 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8161E18DGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	活跃	GSI技术	RECTANGULAR	LBGA	2.5 V	1048576 words	GS8161E18DGD-250I	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	有	BGA	5.29	GSI TECHNOLOGY			GS8161E18DGD			3A991.B.2.B			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS	230 mA, 250 mA	5.5 ns		1 M x 18		1.4 mm	18					18874368 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V		15 mm	13 mm
GS8162Z36DD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	+ 85 C	200 MHz	有	Industrial grade				FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	SDR	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	18	- 40 C	2.7 V	-40 to 100 °C	Tray	GS8162Z36DD				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36					SRAM	18 Mbit			Industrial							SRAM
GS88236CGB-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	SDR	BGA,	网格排列	3	256000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS88236CGB-250	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.13	BGA	有	250 MHz	+ 70 C	3.6 V	0 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details		Tray	GS88236CGB	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	155 mA, 195 mA	5.5 ns		256 k x 36		1.77 mm	36		SRAM			9437184 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342T07BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342T07BD-300I	300 MHz	4194304 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	300 MHz	FBGA	1.8000 V	Synchronous	8 Bit	有	-40 to 100 °C	Tray	GS8342T07BD	e0		3A991.B.2.B	SigmaDDR-II+ B2	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit		SYNCHRONOUS	460 mA	0.45		4 M x 8	3-STATE	1.4 mm	8		SRAM		0.195 A	36	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8182Q09BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS8182Q09BGD-300I	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.33	BGA	Industrial grade	300 MHz	FBGA	-40 to 85 °C	Tray	GS8182Q09BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	810 mA		Pipelined	2 M x 9		1.4 mm	9	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8161Z18DGD-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	250 MHz	+ 85 C	2.7 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	-40 to 100 °C																						18 Mbit	2		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit		18 Mbit			Industrial
GS8342DT37BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	85 °C	无	GS8342DT37BD-333	333 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	333 MHz	FBGA	0 to 85 °C	Tray	GS8342DT37BD	e0	无	3A991.B.2.B	SigmaQuad-II+ B4	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	OTHER	36 Mbit	2	SYNCHRONOUS	775 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816236DGB-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	BGA,	网格排列	512000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS816236DGB-250V	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS816236DGB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36		1.99 mm	36	19 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342Q08BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	0.45 ns	70 °C	无	GS8342Q08BD-250	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.37	BGA	Commercial grade	250 MHz	FBGA	QDR	0 to 85 °C	Tray	GS8342Q08BD			3A991.B.2.B	SigmaQuad-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	665 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	0.205 A	33554432 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS864436GE-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	15	2.3 V	-40 to 85 °C	Tray	GS864436GE				同步突发				Memory & Data Storage												72 Mbit	4		270 mA, 345 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Industrial							SRAM