N/A

-

BGA-165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

有

375 MHz

+ 125 C

1.9 V

- 55 C

Tray

GS8672Q19BE

SigmaQuad-II+ ECCRAM

Memory & Data Storage

72 Mbit

4 M x 18

SRAM

72

SRAM

N/A

-

表面贴装

YES

100

100

160 mA

Compliant

LEAD FREE, TQFP-100

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

8.5 ns

70 °C

有

GS8320Z36GT-133

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.56

QFP

有

3A991.B.2.B

Pure Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

117.6 MHz

R-PQFP-G100

不合格

COMMERCIAL

4

SYNCHRONOUS

8.5 ns

1MX36

1.6 mm

36

20 b

36 Mb

37748736 bit

117.6 MHz

PARALLEL

Synchronous

36 b

ZBT SRAM

3.6 V

2.3 V

20 mm

14 mm

无

N/A

-

BGA-260

YES

260

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

无

GS8673ET36BK-725IS

2097152 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.82

Compliant

有

725 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR

Tray

GS8673ET36BK

3A991.B.2.B

SigmaDDR-IIIe B2

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.49 A

2 M x 36

2.3 mm

36

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-260

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

Non-Compliant

有

675 MHz

+ 100 C

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

2.26 A

4 M x 18

SRAM

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

无

GS8673ET18BK-675

4194304 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.78

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

N

Tray

GS8673ET18BK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

1.75 A

4 M x 18

2.3 mm

18

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-260

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

QDR-III

SigmaQuad-IIIe

Compliant

有

550 MHz

+ 85 C

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

70 °C

0 °C

Memory & Data Storage

1.35 V

72 Mbit

1.93 A

4 M x 18

21 b

SRAM

72 Mb

SRAM

无

N/A

-

表面贴装

YES

165

165

220 mA

GSI TECHNOLOGY

5.65

BGA

Compliant

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS8321Z36E-250I

250 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

无

3A991.B.2.B

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

153 MHz

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

1

SYNCHRONOUS

0.32 mA

6.5 ns

1MX36

3-STATE

1.5 mm

36

20 b

36 Mb

0.08 A

37748736 bit

PARALLEL

COMMON

Synchronous

36 b

ZBT SRAM

2.3 V

3.6 V

2.3 V

17 mm

15 mm

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

9 b

24 b

288 Mb

300 MHz

无

N/A

-

6 Weeks

YES

119

119

Compliant

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

网格排列

3

128000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS73024AGB-10I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX24

1.99 mm

24

17 b

3 Mb

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

无

N/A

-

6 Weeks

YES

48

48

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

512000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS74108AGX-12I

524288 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

ASYNCHRONOUS

512KX8

1.2 mm

8

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

10 mm

6 mm

N/A

-

6 Weeks

YES

119

119

Compliant

14 X 22 MM, 1.27 MM PITCH, FPBGA-119

网格排列

BGA

5.72

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

BGA

3.3 V

131072 words

GS73024AB-8I

无

85 °C

8 ns

未说明

-40 °C

PLASTIC/EPOXY

128000

3

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX24

1.99 mm

24

17 b

3 Mb

3145728 bit

PARALLEL

标准SRAM

3.6 V

3.135 V

22 mm

14 mm

无

N/A

-

6 Weeks

YES

44

44

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

10 ns

85 °C

有

GS72108AGP-10I

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.54

TSOP2

有

3A991.B.2.B

Pure Matte Tin (Sn)

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

ASYNCHRONOUS

0.1 mA

256KX8

3-STATE

1.2 mm

8

0.025 A

2097152 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

YES

18.41 mm

10.16 mm

N/A

-

6 Weeks

YES

44

44

Compliant

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS74108AGP-8I

524288 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.18

TSOP2

e3

有

3A991.B.2.B

Matte Tin (Sn)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

1

ASYNCHRONOUS

512KX8

1.2 mm

8

19 b

4 Mb

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

Compliant

85 °C

-40 °C

2

20 b

18 Mb

无

N/A

-

表面贴装

BGA-119

119

119-FPBGA (22x14)

GSI Technology Inc.

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS81284Z36

活跃

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

-40 to 85 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

144 Mbit

4

250 MHz

415 mA, 535 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 36

-

22 Bit

SRAM

144 Mbit

Industrial

SRAM

4M x 36

N/A

-

6 Weeks

YES

44

44

-40 °C

未说明

8 ns

85 °C

有

GS71116AGP-8IT

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.46

TSOP2

Industrial grade

TSOP-II

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 to 85 °C

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

1

ASYNCHRONOUS

0.13 mA

64KX16

3-STATE

1.2 mm

16

16 Bit

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

GSI Technology Inc.

Parallel

SMD/SMT

1.7 V

18

- 40 C

2.7 V

+ 85 C

250 MHz

有

Tray

GS8321Z

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5.5 ns

85 °C

有

GS8321Z36AGD-250IV

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.61

BGA

Industrial grade

-40 to 100 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

250 MHz

260 mA, 315 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

1M x 36

15 mm

13 mm

N/A

-

12 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

250 MHz

+ 100 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS8256436

活跃

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

有

GS8256436GB-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

Industrial grade

250 MHz

2.5000 V

2.25 V

Synchronous

8 MWords

36 Bit

2.75 V

有

-40 to 100 °C

Tray

GS8256436GB

3A991.B.2.B

Pipeline/Flow Through

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

288 Mbit

SYNCHRONOUS

250 MHz

520 mA, 610 mA

5.5@Flow-Through/2.5

SRAM

Parallel

8 M x 36

1.99 mm

36

-

24 Bit

SRAM

288

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

8M x 36

22 mm

14 mm

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

表面贴装

1.9 V

18 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

Compliant

有

350 MHz

+ 85 C

1.9 V

-40 to 100 °C

Bulk

GS81302S18GE

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.185 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

YES

144

144

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

未说明

有

GS4288S18GL-33I

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.61

BGA

Compliant

TBGA,

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

18 b

23 b

288 Mb

533 MHz

无

N/A

-

YES

144

144

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

未说明

有

GS4288S18GL-25

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.61

BGA

Compliant

TBGA,

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

18 b

23 b

288 Mb

288

400 MHz

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302DT07E

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.055 A

Pipelined

16 M x 8

22 b

SRAM

144 Mbit

Commercial

SRAM