GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																												操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	记忆密度	筛选水平	并行/串行	内存IC类型	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS81302T19GE-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	-40 to 100 °C	Tray	GS81302T19GE				SigmaDDR-II+ B2				Memory & Data Storage											144 Mbit	1		810 mA		Pipelined	8 M x 18			22 Bit	SRAM	144 Mbit		Industrial					SRAM
GS881E18CGT-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	66	0 C	Commercial grade				133.3@Flow-Through/150@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	SDR	0 to 70 °C	Tray	GS881E18CGT				DCD Pipeline/Flow Through				Memory & Data Storage											9 Mbit	2		105 mA, 115 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18			18 Bit	SRAM	9 Mbit		Commercial					SRAM
GS81302TT10E-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	400 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				400 MHz	-40 to 100 °C																					144 Mbit	1		905 mA		Pipelined	16 M x 9			23 Bit		144 Mbit		Industrial
GS81302Q37GE-318	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	318 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	GS81302Q37GE-318	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	8.46	BGA	Commercial grade	318 MHz	FBGA	0 to 85 °C	Tray	GS81302Q37GE			3A991.B.2.B	SigmaQuad-II+ B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165		COMMERCIAL	144 Mbit	2	SYNCHRONOUS	1.44 A		Pipelined	4 M x 36	1.5 mm	36	21 Bit	SRAM	144 Mbit	150994944 bit	Commercial	PARALLEL	QDR SRAM	1.9 V	1.7 V	SRAM	17 mm	15 mm
GS816118DGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	0 to 70 °C	Tray	GS816118DGD				Pipeline/Flow Through				Memory & Data Storage											18 Mbit	2		255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial					SRAM
GS864036GT-167I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	9 Weeks, 4 Days	TQFP-100	YES	100	100	125@Flow-Through/167@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	167 MHz	+ 85 C	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	18	- 40 C	3.6 V	LQFP,	FLATPACK, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	有	GS864036GT-167I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	1.76	QFP	Industrial grade	-40 to 85 °C	Tray	GS864036GT	e3	有	3A991.B.2.B	Pipeline/Flow Through	纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	240 mA, 290 mA	8 ns	Flow-Through/Pipelined	2 M x 36	1.6 mm	36	21 Bit	SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL	缓存SRAM	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8673ED36BGK-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-260	YES	260	500 MHz	+ 85 C	1.4 V	0 C	8	1.25 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-IIIe	Details	DDR	HBGA,	GRID ARRAY, HEAT SINK/SLUG	2000000	PLASTIC/EPOXY	未说明	85 °C	有	GS8673ED36BGK-500	1.3 V	HBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.73	Commercial grade		500 MHz	1.3, 1.35 V	Synchronous	2 MWords	36 Bit	表面贴装	有	0 to 70 °C	Tray	GS8673ED36BGK			3A991.B.2.B	SigmaQuad-IIIe B4		IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B260		OTHER	72 Mbit	1	SYNCHRONOUS	2.44 A		Pipelined	2 M x 36	2.3 mm	36	19 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	DDR SRAM	1.4 V	1.25 V	SRAM	22 mm	14 mm
GS81302D10E-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	QDR-II	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	表面贴装	1.9 V	9 Bit	16 MWords	Synchronous	1.7 V	有	350 MHz	+ 70 C	1.9 V	0 C	0 to 85 °C	Tray	GS81302D10E				SigmaQuad-II+ B4				Memory & Data Storage											144 Mbit	2		940 mA		Pipelined	16 M x 9			22 Bit	SRAM	144 Mbit		Commercial					SRAM
GS81302T10E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	Industrial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	表面贴装	1.9 V	9 Bit	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	-40 to 100 °C	Tray	GS81302T10E				SigmaDDR-II+ B2				Memory & Data Storage											144 Mbit	1		1.01 A		Pipelined	16 M x 9			23 Bit	SRAM	144 Mbit		Industrial					SRAM
GS81302Q19GE-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	3	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS81302Q19GE-300I	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.33	BGA	Industrial grade	-40 to 100 °C	Tray	GS81302Q19GE	e1	有	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	1.26 A		Pipelined	8 M x 18	1.5 mm	18	22 Bit	SRAM	144 Mbit	150994944 bit	Industrial	PARALLEL	QDR SRAM	1.9 V	1.7 V	SRAM	17 mm	15 mm
GS81302TT20E-500I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	Industrial grade				500 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	500 MHz	+ 85 C	1.9 V	- 40 C	10	-40 to 100 °C	Tray	GS81302TT20E				SigmaDDR-II+				Memory & Data Storage											144 Mbit	1		1.08 A		Pipelined	8 M x 18			22 Bit	SRAM	144 Mbit		Industrial					SRAM
GS8642Z18GB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				133.3@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	0 to 70 °C	Tray	GS8642Z18GB				NBT Pipeline/Flow Through				Memory & Data Storage											72 Mbit	2		205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial					SRAM
GS816218DGB-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 70 C	2.7 V	0 C	0 to 85 °C	Tray	GS816218DGB				Pipeline/Flow Through				Memory & Data Storage											18 Mbit	2		220 mA, 280 mA	5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial					SRAM
GS881Z32CGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	222.2@Flow-Through/333@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	4.5 ns	85 °C	有	GS881Z32CGT-333I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.53	QFP	Industrial grade	-40 to 85 °C	Tray	GS881Z32CGT	e3	有	3A991.B.2.B	NBT Pipeline/Flow Through	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	INDUSTRIAL	9 Mbit	1	SYNCHRONOUS	200 mA, 260 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	ZBT SRAM	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8644Z18E-166I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Industrial grade				142.8@Flow-Through/166@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	166 MHz	+ 85 C	3.6 V	- 40 C	15	-40 to 85 °C	Tray	GS8644Z18E				NBT				Memory & Data Storage											72 Mbit	2		260 mA, 320 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial					SRAM
GS8640Z18GT-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	4000000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS8640Z18GT-300	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	QFP	Commercial grade	181.8@Flow-Through/300@Pipelined MHz	0 to 70 °C	Tray	GS8640Z18GT	e3	有	3A991.B.2.B	NBT Pipeline/Flow Through	纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	COMMERCIAL	72 Mbit	2	SYNCHRONOUS	270 mA, 370 mA	5.5 ns	Flow-Through/Pipelined	4 M x 18	1.6 mm	18	22 Bit	SRAM	72 Mb	75497472 bit	Commercial	PARALLEL	ZBT SRAM	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS81302DT37E-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165		300 MHz	FBGA	1.8000 V	36 Bit	有	300 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	QDR-II	Commercial grade			0 to 85 °C	Tray	GS81302DT37E				SigmaQuad-II+ B4				Memory & Data Storage											114 Mbit			915 mA	0.45		4 M x 36				SRAM		144	Commercial					SRAM
GS8342DT07BGD-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				450 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	-40 to 100 °C	Tray	GS8342DT07BGD				SigmaQuad-II+ B4				Memory & Data Storage											36 Mbit	2		795 mA		Pipelined	4 M x 8			20 Bit	SRAM	36 Mbit		Industrial					SRAM
GS81302TT37GE-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	1.9 V	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	LBGA,	GRID ARRAY, LOW PROFILE	BGA	5.06	GSI TECHNOLOGY	不推荐	RECTANGULAR	LBGA	1.8 V	4194304 words	GS81302TT37GE-400	有	70 °C	0.45 ns	未说明	PLASTIC/EPOXY	4000000	3	400 MHz	1.8000 V	1.7 V	Synchronous	36 Bit	0 to 85 °C	Tray	GS81302TT37GE	e1	有	3A991.B.2.B	SigmaDDR-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	COMMERCIAL	144 Mbit		SYNCHRONOUS	995 mA	0.45		4 M x 36	1.5 mm	36		SRAM		144		PARALLEL	DDR SRAM	1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8644Z36GE-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	15	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	-40 to 85 °C	Tray	GS8644Z36GE				NBT				Memory & Data Storage											72 Mbit	4		295 mA, 380 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36			21 Bit	SRAM	72 Mbit		Industrial					SRAM
GS8662D10BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	-40 to 100 °C	Tray	GS8662D10BGD				SigmaQuad-II+ B4				Memory & Data Storage											72 Mbit	2		590 mA		Pipelined	8 M x 9			21 Bit	SRAM	72 Mbit		Industrial					SRAM
GS8182T08BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165			表面贴装	1.9 V	8 Bit	2 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	300 MHz	Commercial grade			0 to 70 °C																						1				Pipelined				20 Bit		18 Mbit		Commercial
GS8662R09BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	0 to 85 °C	Tray	GS8662R09BD				SigmaDDR-II B4				Memory & Data Storage											72 Mbit	1		495 mA		Pipelined	8 M x 9			21 Bit	SRAM	72 Mbit		Commercial					SRAM
GS8128418GB-167V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	10	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				167 MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	8 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 70 C	3.6 V	0 C	0 to 70 °C	Tray	GS8128418GB				SCD/DCD Pipeline/Flow Through				Memory & Data Storage											144 Mbit	2		315 mA, 365 mA	8 ns	Flow-Through/Pipelined	8 M x 18			23 Bit	SRAM	144 Mbit		Commercial					SRAM
GS81302TT38GE-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	-40 to 100 °C	Tray	GS81302TT38GE				SigmaDDR-II+				Memory & Data Storage											144 Mbit	1		1.005 A		Pipelined	4 M x 36			21 Bit	SRAM	144 Mbit		Industrial					SRAM