N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T36BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Industrial grade

250 MHz

-40 to 100 °C

Tray

GS8662T36BD

e0

无

3A991.B.2.B

SigmaDDR-II B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

630 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

GS81302D06GE

144 Mbit

2

1.185 A

Pipelined

16 M x 8

22 Bit

144 Mbit

Industrial

N/A

-

BGA-119

YES

119

119

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8128436GB-167IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

167 MHz

-40 to 85 °C

Tray

GS8128436GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

4

SYNCHRONOUS

375 mA, 430 mA

8 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

165

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

,

有

GS81302D19GE-450

不推荐

GSI TECHNOLOGY

5.8

Industrial grade

450 MHz

BGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

0 to 70 °C

Tray

GS81302D19GE

SigmaQuad-II+ B4

Memory & Data Storage

compliant

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

FBGA

DDR

0 to 85 °C

72 Mbit

1

695 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

BGA-209

YES

209

209

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 70 C

3.6 V

0 C

GSI技术

GSI技术

NBT SRAM

N

SDR

14

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS8322Z72C-166

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.63

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS8322Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

225 mA, 280 mA

8 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

500 MHz

BGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 85 °C

Tray

GS82582QT20GE

SigmaQuad-II+ B2

Memory & Data Storage

288 Mbit

1

1.43 A

Pipelined

16 M x 18

23 Bit

SRAM

288 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

333 MHz

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

表面贴装

1.9 V

36 Bit

-40 to 100 °C

144 Mbit

2

1.01 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS88218CD-150

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Tray

GS88218CD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

0.37 ns

无

GS81302D11E-500

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.62

BGA

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

0 to 85 °C

Tray

GS81302D11E

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

144 Mbit

2

SYNCHRONOUS

1.26 A

Pipelined

16 M x 9

1.5 mm

9

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

9 Mbit

1

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

256000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

无

GS88132CD-150I

262144 words

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS88132CD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

256 k x 32

1.4 mm

32

SRAM

8388608 bit

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302TT19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

SyncBurst

SDR

Military grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 125 C

3.6 V

- 55 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-55 to 125 °C

Tray

GS88236CD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T37GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z36AD-400

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS8321Z36AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662D18BD-350M

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.77

Military grade

350 MHz

FBGA

1.8000 V

Synchronous

18 Bit

Compliant

350 MHz

+ 125 C

1.9 V

- 55 C

1.7 V

SMD/SMT

Parallel

Bulk

3A991.B.2.B

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

SYNCHRONOUS

845 mA

4 M x 18

1.4 mm

18

22 b

72 Mb

72

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT07GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

1 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-260

YES

260

260

4 MWords

18 Bit

1.4 V

表面贴装

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673EQ18BGK-550I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Industrial grade

550/375 MHz

BGA

QDR

1.3500 V

1.25 V

Synchronous

-40 to 85 °C

Tray

GS8673EQ18BGK

3A991.B.2.B

SigmaQuad-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

1.93 A

Pipelined

4 M x 18

2.3 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-48

3.6 V

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

GS71116AGU

Asynchronous

Memory & Data Storage

1 Mbit

125 mA

8 ns

64 k x 16

SRAM

SRAM

N/A

-

N/A

-

TSOP-44

3.6 V

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

GS71116AGP

Asynchronous

Memory & Data Storage

1 Mbit

125 mA

8 ns

64 k x 16

SRAM

SRAM

N/A

-

N/A

-