N/A

-

N/A

-

BGA-119

有

200 MHz

+ 85 C

3.6 V

- 40 C

84

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS842Z36CGB

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

160 mA, 190 mA

6.5 ns

128 k x 36

SRAM

SRAM

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

150 MHz

+ 70 C

3.6 V

0 C

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 36

N/A

-

N/A

-

BGA-165

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

有

Tray

GS88118CD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

140 mA, 150 mA

7.5 ns

512 k x 18

SRAM

SRAM

N/A

-

TSOP-44

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

3.6 V

GS71116AGP

Asynchronous

Memory & Data Storage

1 Mbit

125 mA

8 ns

64 k x 16

SRAM

SRAM

N/A

-

TQFP-100

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

290 mA, 370 mA

4.2 ns

512 k x 32

SRAM

SRAM

N/A

-

TQFP-100

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

Tray

GS880F36CGT

流过

Memory & Data Storage

9 Mbit

140 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

QDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

0 to 85 °C

Tray

GS81302D10GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

300 MHz

QDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Tray

GS81302D37GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

925 mA

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

N/A

-

BGA-165

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Tray

GS81302Q09GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

1.25 A

16 M x 9

SRAM

SRAM

N/A

-

BGA-165

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS88136CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Tray

GS81302T11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1.01 A

16 M x 9

SRAM

SRAM

N/A

-

BGA-165

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

有

Tray

GS81302T20E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1.01 A

8 M x 18

SRAM

SRAM

N/A

-

BGA-165

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS882Z18CGD

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

150 mA, 175 mA

6.5 ns

512 k x 18

18 b

SRAM

9 Mb

SRAM

无

N/A

-

TQFP-100

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Compliant

GS881E18CGT

85 °C

-40 °C

9 Mbit

2

165 mA, 200 mA

5.5 ns

512 k x 18

18 b

9 Mb

无

N/A

-

TSOP-44

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

3.6 V

GS71116AGP

Asynchronous

Memory & Data Storage

1 Mbit

100 mA

10 ns

64 k x 16

SRAM

SRAM

N/A

-

BGA-165

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Tray

GS8662S08BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

695 mA

8 M x 8

SRAM

72

SRAM

N/A

-

BGA-165

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS881E36CGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

140 mA, 170 mA

6.5 ns

256 k x 36

18 b

SRAM

9 Mb

SRAM

无

N/A

-

BGA-119

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

167 MHz

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

167 MHz

-40 to 85 °C

GS81284Z18GB

144 Mbit

2

350 mA, 400 mA

8 ns

Flow-Through/Pipelined

8 M x 18

22 Bit

144 Mbit

Industrial

N/A

-

8 Weeks

TQFP-100

GSI技术

SyncBurst

Details

SDR

,

有

GS88132CGT-250V

活跃

GSI TECHNOLOGY

5.8

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS88132CGT

同步突发

Memory & Data Storage

compliant

9 Mbit

140 mA, 180 mA

5.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-119

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS8128436GB

SCD/DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

144 Mbit

4

385 mA, 475 mA

7.5 ns

4 M x 36

22 b

SRAM

144 Mb

144

SRAM

无

N/A

-

TQFP-100

100

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

0 to 85 °C

Tray

GS8662DT06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM