N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 70 °C

Tray

GS81302D37E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

DDR-II

SigmaDDR-II+

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.01 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

BGA

5.15

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

2.5 V

133 MHz

GS8644Z36E-133

无

70 °C

8.5 ns

未说明

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

0 to 70 °C

Tray

GS8644Z36E

无

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

230 mA, 270 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-260

260

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

625 MHz

+ 85 C

1.4 V

0 C

1.3 V

SMD/SMT

Parallel

Commercial grade

625/400 MHz

BGA

DDR

0 to 70 °C

GS8673ET36BGK

72 Mbit

2.23 A

Pipelined

2 M x 36

72 Mbit

Commercial

N/A

-

BGA-260

260

BGA

QDR

Synchronous

4 MWords

18 Bit

表面贴装

有

714 MHz

+ 100 C

- 40 C

8

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

Industrial grade

714 MHz

-40 to 85 °C

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

1

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

2.5 V

262144 words

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS882Z36CGD-200

BGA

5.11

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.4 mm

36

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

QDR

-40 to 100 °C

GS81302DT10GE

144 Mbit

2

950 mA

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

Commercial grade

256000

PLASTIC/EPOXY

未说明

70 °C

无

GS88136CD-200

3.3 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

0 to 70 °C

3A991.B.2.B

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

9 Mbit

9437184 bit

Commercial

SERIAL

缓存SRAM

3.6 V

3 V

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

NBT SRAM

SDR

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS882Z18CD

NBT

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Industrial

SRAM

N/A

-

5 Weeks

BGA-209

YES

209

209

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

8 ns

70 °C

无

GS832272C-166

166 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.63

BGA

Commercial grade

125@Flow-Through/166@Pipelined MHz

0 to 70 °C

Tray

GS832272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

225 mA, 280 mA

8 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.06 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

500 MHz

FBGA

DDR

0 to 85 °C

GS81302TT38GE

144 Mbit

1

1.3 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Commercial

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

Industrial grade

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

375 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 85 °C

Tray

GS8320Z18AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T19GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS864218B-167I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS864218B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T08BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

BGA

5.36

GSI TECHNOLOGY

活跃

Industrial grade

300 MHz

FBGA

-40 to 100 °C

Tray

GS8662T08BD

e0

无

3A991.B.2.B

SigmaDDR-II B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

505 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 Bit

SRAM

72 Mbit

67108864 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342T19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342Q37BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

895 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS8640E36GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

300 mA, 420 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

GSI技术

5 ns

GSI TECHNOLOGY

200@Flow-Through/300@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

有

GS816272CGC-300I

2.5 V

LBGA

RECTANGULAR

活跃

5.16

BGA

Industrial grade

SDR

21

-40 to 85 °C

Tray

GS816272CGC

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

300 mA, 375 mA

5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

66

0 C

2.7 V

+ 70 C

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

70 °C

有

GS880E32CGT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Commercial grade

181.5@Flow-Through/250@Pipelined MHz

TQFP

0 to 70 °C

Tray

GS880E32CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

8 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

6.5 ns

85 °C

有

GS880F36CGT-6.5IV

153 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

153.8 MHz

-40 to 85 °C

Tray

GS880F36CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA

6.5 ns

Flow-Through

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

表面贴装

350 MHz

+ 125 C

1.9 V

- 55 C

1.7 V

SMD/SMT

Parallel

Military grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

18 Bit

GS8662T18BD

72 Mbit

720 mA

Pipelined

4 M x 18

22 Bit

72 Mbit

Military

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S36E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM