N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

0 to 85 °C

72 Mbit

2

820 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Military grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

-55 to 125 °C

Tray

GS81302TT06E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

Pipelined

16 M x 8

23 Bit

SRAM

144 Mb

Military

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

318 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

318 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS81302Q07GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.265 A

Pipelined

16 M x 8

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

100

100

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS881Z32CGD-200

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

QFP

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS881Z32CGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 32

1.6 mm

32

SRAM

8388608 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302TT06GE-500

16777216 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.31

BGA

有

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS81302TT06GE

e1

有

3A991.B.2.B

SigmaDDR-II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

1.07 A

16 M x 8

1.5 mm

8

SRAM

144

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS8161Z18DD

NBT

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

18 Bit

8 MWords

有

450 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302DT19E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS81302S18E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

995 mA

Pipelined

8 M x 18

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

18 Bit

2.7, 3.6 V

表面贴装

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS864218B-300

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.17

BGA

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

0 to 70 °C

GS864218B

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

5.5 ns

Flow-Through/Pipelined

4MX18

1.99 mm

18

22 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

Commercial grade

FBGA

1.8000 V

1.7 V

9 Bit

1.9 V

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

0 to 85 °C

GS81302TT10E

144 Mbit

755 mA

0.45

16 M x 9

144

Commercial

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

0 to 85 °C

72 Mbit

1

625 mA

Pipelined

2 M x 36

20 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS81302TT11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302DT38E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.66 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

143@Flow-Through/225@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

225 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

265 mA, 370 mA

7 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302T11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

855 mA

Pipelined

8 M x 18

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

36 Bit

表面贴装

有

625 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673EQ36BGK-625I

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

625/400 MHz

BGA

QDR

1.3500 V

Synchronous

2 MWords

-40 to 85 °C

Tray

GS8673EQ36BGK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.97 A

Pipelined

2 M x 36

2.3 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

318 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302QT19GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.265 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

GSI技术

SyncBurst

Details

SDR

有

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS880F18CGT

流过

Memory & Data Storage

9 Mbit

165 mA

5.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

144 Mbit

905 mA

16 M x 9

144

N/A

-

BGA-48

N

3.6 V

270

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

GS71116AU

Asynchronous

Memory & Data Storage

1 Mbit

100 mA

10 ns

64 k x 16

SRAM

SRAM

N/A

-

BGA-119

119

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

-40 to 85 °C

Tray

GS882Z36CGB

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302D19GE-300

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Commercial grade

300 MHz

0 to 85 °C

Tray

GS81302D19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

815 mA

Pipelined

8 M x 18

1.5 mm

18

21 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

153.8@Flow-Through/200@Pipelined MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8162Z72CGC-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

-40 to 85 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

240 mA, 300 mA

6.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

100

36 Bit

2.7, 3.6 V

表面贴装

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881Z36CGD-150

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.81

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm