N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

36 Mb

无

N/A

-

6 Weeks

BGA-48

YES

48

48

3.6 V

表面贴装

Compliant

有

-

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

10 ns

70 °C

有

GS71116AGU-10

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

0 to 70 °C

GS71116AGU

e1

有

3A991.B.2.B

Asynchronous

锡银铜

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1 Mbit

1

ASYNCHRONOUS

100 mA

10 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

无

N/A

-

BGA-48

48

SDR

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

有

-

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

0 to 70 °C

GS71116AU

Asynchronous

Memory & Data Storage

1 Mbit

1

100 mA

10 ns

64 k x 16

16 Bit

SRAM

1 Mbit

Commercial

SRAM

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x13)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Tray

GS8662R

活跃

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662R18BGD

SigmaDDR-II B4

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

72 Mbit

1

350 MHz

600 mA

SRAM

Parallel

Pipelined

4 M x 18

-

22 Bit

SRAM

72 Mbit

Industrial

SRAM

4M x 18

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Bulk

GS816136DGT

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

21

-40 to 85 °C

Tray

GS816272CC

SCD/DCD

85 °C

-40 °C

Memory & Data Storage

18 Mbit

8

275 mA, 360 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

GS8662D37BGD

85 °C

0 °C

1.8 V

72 Mbit

2

1.055 A

Pipelined

2 M x 36

19 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T09BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

590 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 100 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS816118DGT

同步突发

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

70 °C

有

GS8322Z36AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

125@Flow-Through/167@Pipelined MHz

Compliant

有

167 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS864036GT-167V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

表面贴装

2, 2.7 V

36 Bit

2 MWords

0 to 70 °C

Tray

GS864036GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8662S36BD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

810 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

300 MHz

有

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8662D36BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Compliant

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 70 °C

GS882Z18CGD

70 °C

0 °C

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

333 MHz

有

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8662D36BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

810 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS8161Z36DGT

NBT

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302D18E

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.005 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662DT19BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS864018GT-250IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662D37BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

167 MHz

+ 70 C

2.7 V

0 C

18

0 to 70 °C

Tray

GS864032GT

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

- 40 C

2.7 V

+ 85 C

250 MHz

有

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

66

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662T36BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302TT06GE

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

895 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

1.7 V

21

- 55 C

2.7 V

+ 125 C

250 MHz

有

Military grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-55 to 125 °C

Tray

GS816273CC

Pipeline

Memory & Data Storage

18 Mbit

8

5.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Military

SRAM