N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

550 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS8342D06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

940 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

165

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

Compliant

0 to 70 °C

70 °C

0 °C

1.8 V

1

Pipelined

20 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

165

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

-40 to 100 °C

Bulk

GS8662S09BD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

590 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

SigmaSIO DDR-II

DDR

15

Parallel

GSI技术

GSI技术

Compliant

有

400 MHz

Bulk

GS8662S18BGD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

165

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

0 to 85 °C

85 °C

0 °C

1.8 V

1

Pipelined

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS8662S09BD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

735 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

117.6@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 70 C

3.6 V

0 to 70 °C

Tray

GS832272GC

SCD/DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

36 Mbit

8

210 mA, 260 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-260

YES

260

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

有

GS8673ET36BGK-725IS

2097152 words

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Compliant

有

725 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Tray

GS8673ET36BGK

3A991.B.2.B

SigmaDDR-IIIe B2

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.49 A

2 M x 36

2.3 mm

36

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

有

GS8321Z18AGD-200V

活跃

GSI TECHNOLOGY

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

18 Bit

2, 2.7 V

Compliant

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 85 °C

Bulk

GS8321Z18AGD

有

NBT

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

195 mA, 230 mA

6.5@Flow-Through/3@P

2 M x 18

21 b

SRAM

36 Mb

36

Commercial

SRAM

无

N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS8662T07BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

590 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS8662T07BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

705 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-260

YES

260

SigmaDDR-IIIe

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673ET36BGK-725S

2097152 words

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Compliant

有

725 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8673ET36BGK

3A991.B.2.B

SigmaDDR-IIIe B2

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.49 A

2 M x 36

2.3 mm

36

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-209

209

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 85 C

2.7 V

-40 to 85 °C

Tray

GS8322Z72C

NBT

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

245 mA, 340 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS8342TT07BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Bulk

GS81302D19E

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.185 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS8662T07BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

545 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

GS8662S18BD

100 °C

-40 °C

1.8 V

72 Mbit

2

640 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

-40 to 100 °C

Bulk

GS8662T08BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

85 °C

有

GS832032AGT-150V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

133@Flow-Through/150@Pipelined MHz

TQFP

0 to 85 °C

Tray

GS832032AGT

3A991.B.2.B

同步突发

85 °C

0 °C

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

14

0 C

2.7 V

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

5.5 ns

70 °C

有

GS8322Z18AGD-250V

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

FBGA

0 to 85 °C

Tray

GS8322Z18AGD

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

- 40 C

1.9 V

+ 85 C

400 MHz

有

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

DDR

Details

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

-40 to 100 °C

Tray

GS8662T09BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

500 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS8662T20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

760 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无