GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS81302S08E-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR-II	Compliant	Industrial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	-40 to 100 °C	Tray	GS81302S08E				SigmaSIO DDR-II		100 °C	-40 °C			Memory & Data Storage		1.8 V											144 Mbit	2		710 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Industrial							SRAM			无
GS88218CGB-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	Non-Compliant	300 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				300 MHz	-40 to 85 °C		GS88218CGB																							9 Mbit	2		170 mA, 225 mA	5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit		9 Mbit			Industrial
GS8640FZ18GT-7.5	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	100	100	4000000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS8640FZ18GT-7.5	2.5 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.38	QFP	Commercial grade		133.3 MHz	TQFP	SDR	3.3000 V	3 V	Synchronous	4 MWords	18 Bit	3.6 V	表面贴装	Compliant	LQFP,	FLATPACK, LOW PROFILE	3	0 to 70 °C			e3	有	3A991.B.2.B		Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.	8542.32.00.41		CMOS	3.3 V	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		COMMERCIAL		2	SYNCHRONOUS			Flow-Through	4MX18		1.6 mm	18	22 Bit		72 Mbit		75497472 bit	Commercial	PARALLEL		ZBT SRAM		2.75 V	2.25 V		20 mm	14 mm	无
GS8662D06BGD-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GSI技术	活跃	GSI TECHNOLOGY	5.23	BGA	500 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	GS8662D06BGD-500	8388608 words	1.8 V	LBGA	RECTANGULAR			GS8662D06BGD			3A991.B.2.B					流水线结构	8542.32.00.41		CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	72 Mbit		SYNCHRONOUS	890 mA			8 M x 8		1.4 mm	8					72		PARALLEL		QDR SRAM		1.9 V	1.7 V		15 mm	13 mm
GS8662TT37BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8662TT37BD-300	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	300 MHz	FBGA	0 to 85 °C	Tray	GS8662TT37BD	e0	无	3A991.B.2.B	SigmaDDR-II+ B2	Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	72 Mbit	1	SYNCHRONOUS	625 mA		Pipelined	2 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	72 Mbit	0.22 A	75497472 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS832272C-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	LBGA, BGA209,11X19,40	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	BGA209,11X19,40	-40 °C	未说明	7.5 ns	85 °C	无	GS832272C-200I	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	Industrial grade	133.3@Flow-Through/200@Pipelined MHz	-40 to 85 °C	Tray	GS832272C		无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	8	SYNCHRONOUS	245 mA, 340 mA	7.5 ns	Flow-Through/Pipelined	512 k x 72	3-STATE	1.7 mm	72	19 Bit	SRAM	36 Mbit	0.08 A	37748736 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.38 V	2.7 V	2.3 V	SRAM	22 mm	14 mm
GS864236B-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	1.7 V	14	- 40 C	2.7 V	+ 85 C	Industrial grade				133.3@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	SDR	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	-40 to 85 °C	Tray	GS864236B				SCD/DCD Pipeline/Flow Through						Memory & Data Storage													72 Mbit	4		250 mA, 330 mA	7.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8161Z36DGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	-40 to 85 °C	Tray	GS8161Z36DGD				NBT						Memory & Data Storage													18 Mbit	4		300 mA, 385 mA	4 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS81302T07GE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	-40 to 100 °C	Tray	GS81302T07GE				SigmaDDR-II+ B2						Memory & Data Storage													144 Mbit	1		765 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Industrial							SRAM
GS8642Z18B-167V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	BGA,	网格排列	4000000	PLASTIC/EPOXY	未说明	8 ns	70 °C	无	GS8642Z18B-167V	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.17	BGA	Commercial grade	125@Flow-Through/167@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS8642Z18B	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	72 Mbit	2	SYNCHRONOUS	195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.99 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS81284Z18B-167IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	YES	119	119	Synchronous	8 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 85 C	3.6 V	- 40 C	SDR	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	10	BGA,	网格排列	8000000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	无	GS81284Z18B-167IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	BGA	Industrial grade		167 MHz	SDR	1.8, 2.5 V	1.7, 2.3 V	-40 to 85 °C	Tray	GS81284Z18B	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	350 mA, 400 mA	8 ns	Flow-Through/Pipelined	8MX18		1.99 mm	18	22 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS81302D38E-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	YES	165	165	GS81302D38E-400	1.8 V	LBGA	RECTANGULAR	GSI技术	不推荐	GSI TECHNOLOGY	5.06	BGA	Commercial grade		400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	LBGA,	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	未说明	0.45 ns	无	0 to 85 °C					3A991.B.2.B					流水线结构	8542.32.00.41		CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格				2	SYNCHRONOUS			Pipelined	4MX36		1.5 mm	36	20 Bit		144 Mbit		150994944 bit	Commercial	PARALLEL		DDR SRAM		1.9 V	1.7 V		17 mm	15 mm
GS8321Z36AGD-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 100 °C	Tray	GS8321Z36AGD				NBT						Memory & Data Storage													36 Mbit	4		220 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS88136CGT-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	100	100	有	GS88136CGT-250I	262144 words	3.3 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.28	QFP		LQFP,	FLATPACK, LOW PROFILE	256000	UNSPECIFIED	-40 °C	未说明	85 °C						3A991.B.2.B					ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-XQFP-G100	不合格		INDUSTRIAL			SYNCHRONOUS				256KX36		1.6 mm	36					9437184 bit		SERIAL		缓存SRAM		3.6 V	3 V		20 mm	14 mm
GS8342T10BD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	165	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	,	无	GS8342T10BD-450	活跃	GSI TECHNOLOGY	5.88	Commercial grade			450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	450 MHz	0 to 70 °C	Tray	GS8342T10BD				SigmaDDR-II+ B2						Memory & Data Storage								compliant					36 Mbit	1		670 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS88136CGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK	256000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	有	GS88136CGT-250IV	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.28	QFP	Industrial grade	181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	-40 to 85 °C	Tray	GS88136CGT			3A991.B.2.B	同步突发				ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit	1	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36		1.6 mm	32	18 Bit	SRAM	9 Mbit		8388608 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS816272CC-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	1.7, 2.3 V	Synchronous	256 kWords	72 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	256000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	无	GS816272CC-200V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	BGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS816272CC		无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格		COMMERCIAL	18 Mbit	8	SYNCHRONOUS	230 mA, 290 mA	6.5 ns	Flow-Through/Pipelined	256 k x 72		1.7 mm	72	18 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342T20BD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				550 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	550 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342T20BD				SigmaQuad-II+						Memory & Data Storage													36 Mbit	1		810 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8662S08BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662S08BD-400I	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.79	BGA	Industrial grade	400 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C	Tray	GS8662S08BD			3A991.B.2.B	SigmaSIO DDR-II				流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	745 mA		Pipelined	8 M x 8		1.4 mm	8	22 Bit	SRAM	72 Mbit		67108864 bit	Industrial	PARALLEL		标准SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS81302Q19E-318I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	318 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS81302Q19E-318I	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.8	BGA	Industrial grade	318 MHz	FBGA	QDR	1.8000 V	-40 to 100 °C	Tray	GS81302Q19E			3A991.B.2.B	SigmaQuad-II+ B2				流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	1.275 A		Pipelined	8 M x 18		1.5 mm	18	22 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS816272CC-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				200@Flow-Through/300@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	0 to 70 °C	Tray	GS816272CC				Pipeline/Flow Through						Memory & Data Storage													18 Mbit	8		290 mA, 365 mA	5 ns	Flow-Through/Pipelined	256 k x 72				18 Bit	SRAM	18 Mbit			Commercial							SRAM
GS864418GE-166I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	4 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	166 MHz	+ 85 C	3.6 V	- 40 C	15	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	4000000	PLASTIC/EPOXY	-40 °C	未说明	7 ns	85 °C	有	GS864418GE-166I	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.15	BGA	Industrial grade	142.8@Flow-Through/166@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS864418GE	e1	有	3A991.B.2.B	同步突发	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	260 mA, 320 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.5 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	17 mm	15 mm
GS8662Q09BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	15	- 40 C	1.9 V	+ 85 C	300 MHz	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	DDR	SigmaQuad-II	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	-40 to 100 °C	Tray	GS8662Q09BD				SigmaQuad-II						Memory & Data Storage													72 Mbit	2		860 mA		Pipelined	8 M x 9				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8321Z36AGD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	FBGA	1.8, 2.5 V	1.7, 2.3 V	Synchronous	36 Bit	2, 2.7 V					200@Flow-Through/333@Pipelined MHz	0 to 85 °C																													5@Flow-Through/3@Pip										36
GS8662DT06BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	8 Bit	8 MWords	Synchronous	1.7 V	1.8000 V	QDR	FBGA	400 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				400 MHz	表面贴装	1.9 V	-40 to 100 °C		GS8662DT06BGD																							72 Mbit	2		745 mA		Pipelined	8 M x 8				21 Bit		72 Mb			Industrial