N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS832218AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

745 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D08BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

705 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662Q18BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

850 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Bulk

GS8321Z18AGD

100 °C

-40 °C

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

无

N/A

-

8 Weeks

YES

119

119

5.21

BGA

Compliant

BGA, BGA119,7X17,50

网格排列

3

128000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

10 ns

85 °C

无

GS840H36AB-150I

150 MHz

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4

SYNCHRONOUS

0.29 mA

128KX36

3-STATE

2.19 mm

36

17 b

4.5 Mb

0.03 A

4.5

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T36BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

630 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

550 MHz

FBGA

1.8000 V

1.7 V

36 Bit

1.9 V

Compliant

550 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

36 Mbit

2

1.235 A

0.45

1 M x 36

18 b

36 Mb

36

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

70 °C

0 °C

9 Mbit

1

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

9 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 100 °C

Tray

GS8322Z36AGD

NBT

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

165

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

,

无

GS8342TT06BD-500I

活跃

GSI TECHNOLOGY

5.88

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

-40 to 100 °C

Tray

GS8342TT06BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

compliant

36 Mbit

1

740 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

QDR-II

Industrial grade

200 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

-40 to 100 °C

Tray

GS81302Q37GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

0.45

4 M x 36

21 b

SRAM

144 Mb

144

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

8 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

有

GS82582DT38GE-400I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.59

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Tray

GS82582DT38GE

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

288 Mbit

2

SYNCHRONOUS

1.01 A

Pipelined

8 M x 36

1.5 mm

36

21 Bit

SRAM

288 Mbit

301989888 bit

Industrial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

4 MWords

18 Bit

表面贴装

有

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8640FZ18GT-7.5I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Industrial grade

133.3 MHz

TQFP

SDR

3.3000 V

Synchronous

-40 to 85 °C

Tray

GS8640FZ18GT

e3

有

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

225 mA

7.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mb

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T36BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

620 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

Compliant

250 MHz

+ 85 C

-40 to 100 °C

Bulk

100 °C

-40 °C

36 Mbit

4

260 mA, 315 mA

5.5@Flow-Through/3@P

1 M x 36

20 b

36 Mb

36

Industrial

无

N/A

-

BGA-165

165

222.2@Flow-Through/333@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5@Flow-Through/2.5

512 k x 36

19 Bit

SRAM

18 Mb

18

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT38BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

910 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

0 to 70 °C

Tray

GS88236CB

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 85 °C

Tray

GS8640E18GT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II+

N

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

114 Mbit

2

1.055 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.5 ns

85 °C

无

GS8322Z18AB-333I

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Tray

GS8322Z18AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mb

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D20BD-550

550 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

BGA

550 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

550 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

Compliant

LBGA, BGA165,11X15,40

0 to 85 °C

Bulk

GS8342D20BD

3A991.B.2.B

85 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

0.94 mA

Pipelined

4MX18

3-STATE

1.4 mm

18

19 Bit

36 Mbit

0.265 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无