GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																															操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8322Z72C-225V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				143@Flow-Through/225@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	72 Bit	2, 2.7 V	表面贴装	有	225 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS8322Z72C				NBT				Memory & Data Storage												36 Mbit	8		255 mA, 350 mA	7 ns	Flow-Through/Pipelined	512 k x 72				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8322Z36AD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	2 Weeks, 6 Days	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	7.5 ns	70 °C	无	GS8322Z36AD-150V	150 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS8322Z36AD			3A991.B.2.B	NBT		ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.8/2.5 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	1.7 V	2 V	1.7 V	SRAM	15 mm	13 mm
GS816273CC-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				250 MHz	BGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	256 kWords	72 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS816273CC				Pipeline				Memory & Data Storage												18 Mbit	8		350 mA	5.5 ns	Pipelined	256 k x 72				18 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8662Q07BGD-357	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				357 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	357 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8662Q07BGD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		985 mA		Pipelined	8 M x 8				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8662QT19BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662QT19BD-300I	4194304 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.2	BGA	300 MHz	FBGA	1.8000 V	Synchronous	18 Bit	有	300 MHz	+ 85 C	1.9 V	- 40 C	-40 to 100 °C	Tray	GS8662QT19BD	e0	无	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit		SYNCHRONOUS	860 mA	0.45		4 M x 18		1.4 mm	18		SRAM			72		PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS864436GE-225	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/225@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	225 MHz	+ 70 C	3.6 V	0 C	15	2.3 V	SMD/SMT	0 to 70 °C	Tray	GS864436GE				同步突发				Memory & Data Storage												72 Mbit	4		270 mA, 370 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8662T38BD-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	有	500 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR-II	GS8662T38BD-500	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.42	BGA	无	70 °C	0.45 ns	未说明	PLASTIC/EPOXY	2000000	GRID ARRAY, LOW PROFILE	LBGA,	Commercial grade	500 MHz	FBGA	DDR	1.8000 V	1.7 V	0 to 85 °C	Tray	GS8662T38BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	72 Mbit	1	SYNCHRONOUS	985 mA		Pipelined	2 M x 36		1.4 mm	36	20 Bit	SRAM	72 Mbit		75497472 bit	Commercial	PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS864272GC-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	72 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 85 C	3.6 V	4.343812 oz	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS864272GC-250I	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	1.48	BGA	Industrial grade	153.8@Flow-Through/250@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS864272GC	e1	有	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B209	不合格		INDUSTRIAL	72 Mbit	8	SYNCHRONOUS	340 mA, 480 mA	6.5 ns	Flow-Through/Pipelined	1 M x 72		1.7 mm	72	20 Bit	SRAM	72 Mb		75497472 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8662DT38BD-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Synchronous	2 MWords	36 Bit	1.9 V	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	Industrial grade	BGA	5.72	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	GS8662DT38BD-450I	450 MHz	FBGA	QDR	1.8000 V	1.7 V	-40 to 100 °C	Tray	GS8662DT38BD			3A991.B.2.B	SigmaQuad-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	1.065 A		Pipelined	2 M x 36		1.4 mm	36	19 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS81302TT20E-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR-II	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS81302TT20E				SigmaDDR-II+				Memory & Data Storage												144 Mbit	1		1 A		Pipelined	8 M x 18				22 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8662D38BD-550	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	无	GS8662D38BD-550	2097152 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.48	BGA	有	550 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA,		Tray	GS8662D38BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	72 Mbit		SYNCHRONOUS	1.275 A			2 M x 36		1.4 mm	36		SRAM			72		PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS864418GE-166V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				125@Flow-Through/166@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	166 MHz	+ 70 C	2.7 V	0 C	15	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS864418GE				同步突发				Memory & Data Storage												72 Mbit	2		240 mA, 285 mA	8 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8662D18BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8662D18BGD				SigmaQuad-II				Memory & Data Storage												72 Mbit	2		735 mA		Pipelined	4 M x 18				20 Bit	SRAM	72 Mbit			Commercial							SRAM
GS81302D36E-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	375 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				375 MHz	FBGA	QDR	1.8000 V	-40 to 100 °C																						144 Mbit	2		1.115 A		Pipelined	4 M x 36				20 Bit		144 Mbit			Industrial
GS8662D06BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662D06BD-400I	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.5	BGA	Industrial grade	400 MHz	FBGA	QDR	1.8000 V	1.7 V	-40 to 100 °C	Tray	GS8662D06BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	745 mA		Pipelined	8 M x 8		1.4 mm	8	21 Bit	SRAM	72 Mbit		67108864 bit	Industrial	PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8161Z18DD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	4 ns	70 °C	无	GS8161Z18DD-400	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Commercial grade	250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	0 to 70 °C	Tray	GS8161Z18DD			3A991.B.2.B	NBT		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8662D06BD-550	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	70 °C	GS8662D06BD-550	8388608 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.73	BGA	有	550 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	13 X 15 MM, 1 MM PITCH, FPBGA-165	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	0.29 ns		Tray	GS8662D06BD			3A991.B.2.B	SigmaQuad-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	unknown	R-PBGA-B165	不合格		COMMERCIAL	72 Mbit		SYNCHRONOUS				8 M x 8		1.4 mm	8		SRAM			72		PARALLEL		标准SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS81302T10GE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	333 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C		GS81302T10GE																				144 Mbit	1		765 mA		Pipelined	16 M x 9				23 Bit		144 Mbit			Industrial
GS81302S08GE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	YES	165	165	Synchronous	16 MWords	8 Bit	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	Details	DDR-II	LBGA,	GRID ARRAY, LOW PROFILE	3	16000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS81302S08GE-333I	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.06	BGA	Industrial grade		333 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C	Tray	GS81302S08GE	e1	有	3A991.B.2.B	SigmaSIO DDR-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	900 mA		Pipelined	16 M x 8		1.5 mm	8		SRAM	144 Mbit		134217728 bit	Industrial	PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8342D19BGD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				450 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8342D19BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		785 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8662D07BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	Industrial grade					333 MHz	-40 to 100 °C																							2				Pipelined					21 Bit		72 Mbit			Industrial
GS8342TT19BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	350 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C																						36 Mbit	1		575 mA		Pipelined	2 M x 18				20 Bit		36 Mb			Industrial
GS8662TT19BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8662TT19BD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit	1		625 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS832218AGD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	4.2 ns	70 °C	有	GS832218AGD-375	375 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.11	BGA	Commercial grade	238@Flow-Through/375@Pipelined MHz	FBGA	0 to 85 °C	Tray	GS832218AGD	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	250 mA, 350 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8662Q10BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.9 V	+ 85 C	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	Synchronous	8 MWords	9 Bit	表面贴装	有	333 MHz	DDR	Details	SigmaQuad-II+	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	15	- 40 C	-40 to 100 °C	Tray	GS8662Q10BGD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		930 mA		Pipelined	8 M x 9					SRAM	72 Mbit			Industrial							SRAM