GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS81302T37E-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR-II	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302T37E				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		995 mA		Pipelined	4 M x 36				21 Bit	SRAM	144 Mbit			Commercial							SRAM
GS881E36CD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	300 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				200@Flow-Through/300@Pipelined MHz	FBGA	SDR	-40 to 85 °C																						9 Mbit	4		185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 36				18 Bit		9 Mbit			Industrial
GS880E18CGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	66	1.7 V	0 to 70 °C	Tray	GS880E18CGT				DCD				Memory & Data Storage												9 Mbit	2		115 mA, 140 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial							SRAM
GS864218B-167V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	0 to 70 °C	Tray	GS864218B				SCD/DCD Pipeline/Flow Through				Memory & Data Storage												72 Mbit	2		195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18					SRAM	72 Mbit			Commercial							SRAM
GS88036CGT-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	2, 2.7 V	有	150 MHz	+ 85 C	2.7 V	- 40 C	66	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS88036CGT-150IV	262144 words	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.28	QFP	Industrial grade	150 MHz	TQFP	1.8, 2.5 V	1.7, 2.3 V	36 Bit	-40 to 85 °C	Tray	GS88036CGT	e3	有	3A991.B.2.B	同步突发	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit		SYNCHRONOUS	130 mA, 145 mA	7.5@Flow-Through/3.8		256 k x 36		1.6 mm	36		SRAM			9	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS81302Q37GE-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II	Commercial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302Q37GE				SigmaQuad-II+ B2				Memory & Data Storage												144 Mbit	2		1.13 A		Pipelined	4 M x 36				21 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8662TT20BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	350 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				350 MHz	FBGA	DDR	0 to 85 °C		GS8662TT20BGD																				72 Mbit	1		590 mA		Pipelined	4 M x 18				21 Bit		72 Mbit			Commercial
GS8161Z18DGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	18 Bit	1 MWords	Synchronous	2.3, 3 V	2.5, 3.3 V	SDR	TQFP	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	4.5 ns	85 °C	有	GS8161Z18DGT-333I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	QFP	Industrial grade	222.2@Flow-Through/333@Pipelined MHz	表面贴装	2.7, 3.6 V	-40 to 85 °C	Tray	GS8161Z18DGT			3A991.B.2.B	NBT		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	260 mA, 305 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18		1.6 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8182T19BD-435M	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	165	165	未说明	0.45 ns	125 °C	无	GS8182T19BD-435M	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	BGA	5.74	GSI TECHNOLOGY	Military grade		435 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	18 Bit	1.9 V	表面贴装	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-55 °C	-55 to 125 °C					3A991.B.2.B			PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		MILITARY		1	SYNCHRONOUS			Pipelined	1MX18		1.4 mm	18	19 Bit		18 Mbit		18874368 bit	Military	PARALLEL		DDR SRAM		1.9 V	1.7 V		15 mm	13 mm
GS88118CGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	GSI技术	活跃	GSI TECHNOLOGY	5.14	BGA	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	85 °C	有	GS88118CGD-250I	524288 words	3.3 V	LBGA	RECTANGULAR						3A991.B.2.B			ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	9 Mbit		SYNCHRONOUS	165 mA, 200 mA	5.5 ns		512 k x 18		1.4 mm	18					9437184 bit		SERIAL		缓存SRAM		3.6 V	3 V		15 mm	13 mm
GS8662TT10BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662TT10BGD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit	1		545 mA		Pipelined	8 M x 9				22 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8342S09BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaSIO-II	Details	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	9 Bit	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342S09BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		715 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS880Z32CGT-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				表面贴装	2.7, 3.6 V	32 Bit	256 kWords	Synchronous	2.3, 3 V	2.5, 3.3 V	SDR	TQFP	222.2@Flow-Through/333@Pipelined MHz	有	333 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C		GS880Z32CGT				NBT				Memory & Data Storage												9 Mbit	1		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial							SRAM
GS840H18AB-180I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	119	BGA			BGA, BGA119,7X17,50	网格排列	3	256000	PLASTIC/EPOXY	BGA119,7X17,50	-40 °C	未说明	8 ns	85 °C	无	GS840H18AB-180I	180 MHz	262144 words	3.3 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.21				e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3,3.3 V	INDUSTRIAL			SYNCHRONOUS	0.345 mA			256KX18	3-STATE	2.19 mm	18				0.03 A	4718592 bit		PARALLEL	COMMON	缓存SRAM	3.14 V	3.6 V	3 V		22 mm	14 mm
GS881Z32CGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	100	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	5 ns	85 °C	有	GS881Z32CGD-300I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	QFP	Industrial grade	200@Flow-Through/300@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS881Z32CGD	e1	有	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit	1	SYNCHRONOUS	185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 32		1.6 mm	32	18 Bit	SRAM	8 Mbit		8388608 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS816272CC-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	1.7, 2.3 V	Synchronous	256 kWords	72 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	256000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	无	GS816272CC-200V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	BGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS816272CC		无	3A991.B.2.B	SCD/DCD Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格		COMMERCIAL	18 Mbit	8	SYNCHRONOUS	230 mA, 290 mA	6.5 ns	Flow-Through/Pipelined	256 k x 72		1.7 mm	72	18 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8342T20BD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				550 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	550 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342T20BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		810 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8662S08BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8662S08BD-400I	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.79	BGA	Industrial grade	400 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C	Tray	GS8662S08BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	2	SYNCHRONOUS	745 mA		Pipelined	8 M x 8		1.4 mm	8	22 Bit	SRAM	72 Mbit		67108864 bit	Industrial	PARALLEL		标准SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8642Z18B-167V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	BGA,	网格排列	4000000	PLASTIC/EPOXY	未说明	8 ns	70 °C	无	GS8642Z18B-167V	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.17	BGA	Commercial grade	125@Flow-Through/167@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS8642Z18B	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	72 Mbit	2	SYNCHRONOUS	195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18		1.99 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS81284Z18B-167IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	YES	119	119	Synchronous	8 MWords	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	+ 85 C	3.6 V	- 40 C	SDR	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	10	BGA,	网格排列	8000000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	无	GS81284Z18B-167IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	BGA	Industrial grade		167 MHz	SDR	1.8, 2.5 V	1.7, 2.3 V	-40 to 85 °C	Tray	GS81284Z18B	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	350 mA, 400 mA	8 ns	Flow-Through/Pipelined	8MX18		1.99 mm	18	22 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS81302D38E-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	YES	165	165	GS81302D38E-400	1.8 V	LBGA	RECTANGULAR	GSI技术	不推荐	GSI TECHNOLOGY	5.06	BGA	Commercial grade		400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	LBGA,	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	未说明	0.45 ns	无	0 to 85 °C					3A991.B.2.B			流水线结构	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格				2	SYNCHRONOUS			Pipelined	4MX36		1.5 mm	36	20 Bit		144 Mbit		150994944 bit	Commercial	PARALLEL		DDR SRAM		1.9 V	1.7 V		17 mm	15 mm
GS8321Z32AD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	85 °C	无	GS8321Z32AD-400	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	250@Flow-Through/400@Pipelined MHz	2.5, 3.3 V	2.3, 3 V	Synchronous	32 Bit	2.7, 3.6 V	有	400 MHz	0 to 85 °C	Tray	GS8321Z32AD	e0	无	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit		SYNCHRONOUS	285 mA, 395 mA	4@Flow-Through/2.5@P		1 M x 32		1.4 mm	32		SRAM			36	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	15 mm	13 mm
GS81302T37GE-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165		350 MHz	1.8000 V	1.7 V	36 Bit	1.9 V	有	350 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade			0 to 85 °C	Tray	GS81302T37GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit			895 mA	0.45		4 M x 36					SRAM			144	Commercial							SRAM
GS8182S36BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	无	GS8182S36BD-400	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.19	BGA	Commercial grade	400 MHz	FBGA	DDR	1.8000 V	Synchronous	表面贴装	36 Bit	512 kWords	400 MHz	+ 70 C	1.9 V	0 C	0 to 70 °C			e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit	2	SYNCHRONOUS	905 mA		Pipelined	512 k x 36		1.4 mm	36	18 Bit		18 Mbit		18874368 bit	Commercial	PARALLEL		DDR SRAM		1.9 V	1.7 V		15 mm	13 mm
GS8342TT11BD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	9 Bit	4 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	550 MHz	有	550 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342TT11BD-550I	550 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	表面贴装	1.9 V	-40 to 100 °C	Tray	GS8342TT11BD	e0		3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	1	SYNCHRONOUS	810 mA		Pipelined	4 M x 9	3-STATE	1.4 mm	9	21 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm