N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

0 to 70 °C

Tray

GS882Z18CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

120 mA, 130 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

YES

165

165

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

有

GS81302D18GE-167

8388608 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.55

BGA

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

8MX18

1.5 mm

18

144

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

DDR

Industrial grade

450 MHz

FBGA

QDR

表面贴装

18 Bit

4 MWords

Synchronous

1.8000 V

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

-40 to 100 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

4 M x 18

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

181.8@Flow-Through/250@Pipelined MHz

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS881E32CGD-250V

262144 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

2, 2.7 V

32 Bit

Synchronous

1.7, 2.3 V

1.8, 2.5 V

FBGA

0 to 70 °C

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 180 mA

5.5@Flow-Through/3@P

256 k x 32

1.4 mm

32

SRAM

8

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

表面贴装

1.9 V

18 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

357 MHz

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

945 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

表面贴装

2, 2.7 V

36 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

181.8@Flow-Through/250@Pipelined MHz

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8321E36AGD

同步突发

Memory & Data Storage

36 Mbit

4

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x13)

165

GSI Technology Inc.

活跃

GSI TECHNOLOGY

4.78

BGA

Tray

GS8182T19

活跃

Volatile

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8182T19BGD-400I

400 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

GSI技术

-40°C ~ 85°C (TA)

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

SRAM - Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18Mbit

SYNCHRONOUS

400 MHz

0.52 mA

SRAM

Parallel

1MX18

3-STATE

1.4 mm

18

-

0.185 A

18874368 bit

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

1M x 18

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z36AD-333

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

Compliant

333 MHz

+ 70 C

3.6 V

0 C

2.3 V

0 to 85 °C

Bulk

GS8321Z36AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5@Flow-Through/2.5

1 M x 36

1.4 mm

36

20 b

36 Mb

36

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

GS8662D36BGD

85 °C

0 °C

1.8 V

72 Mbit

2

730 mA

Pipelined

2 M x 36

19 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

-40 to 85 °C

Tray

GS882Z18CD

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

DDR-II

Commercial grade

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

0 to 85 °C

Bulk

GS81302S36E

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.105 A

0.45

4 M x 36

21 b

SRAM

144 Mb

144

Commercial

SRAM

无

N/A

-

165

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

0 to 85 °C

85 °C

0 °C

1.8 V

2

Pipelined

19 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342T06BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

680 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

1.9 V

表面贴装

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.37 ns

85 °C

有

GS81302D19GE-450I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

Bulk

GS81302D19GE

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.185 A

Pipelined

8 M x 18

1.5 mm

18

21 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

8 MWords

Synchronous

1.7 V

1.8000 V

QDR

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662DT11BD-400

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

BGA

Commercial grade

400 MHz

FBGA

表面贴装

1.9 V

9 Bit

0 to 85 °C

Bulk

GS8662DT11BD

3A991.B.2.B

SigmaQuad-II+

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

735 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662Q36BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.07 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

未说明

0.45 ns

无

GS81302D38E-400I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

BGA

5.06

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

-40 to 100 °C

Tray

GS81302D38E

3A991.B.2.B

SigmaQuad-II+

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

144 Mbit

2

SYNCHRONOUS

1.41 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342QT37BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.02 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

100

100

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

12 ns

70 °C

有

GS840H36AGT-100

100 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.69

QFP

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

4

SYNCHRONOUS

0.19 mA

128KX36

3-STATE

1.6 mm

36

17 b

4.5 Mb

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

无

N/A

-

165

Commercial grade

400 MHz

QDR

1.7 V

18 Bit

1.9 V

表面贴装

FBGA

1.8000 V

Synchronous

4 MWords

Compliant

0 to 85 °C

Tape & Reel

85 °C

0 °C

1.8 V

2

Pipelined

20 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

2.7, 3.6 V

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

-40 to 85 °C

Bulk

GS8161Z32DD

NBT

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5@Flow-Through/2.5

512 k x 32

19 Bit

SRAM

18 Mb

18

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342DT07BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

675 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

DDR

Commercial grade

357 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

Compliant

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

0 to 85 °C

Bulk

GS8662Q19BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

985 mA

0.45

4 M x 18

21 b

SRAM

72 Mb

72

Commercial

SRAM

无