N/A

-

BGA-119

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

300 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS88237CB

SCD/DCD Pipeline

Memory & Data Storage

119

9 Mbit

2

225 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8662D20BD

SigmaQuad-II+

Memory & Data Storage

165

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-119

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS8642Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

119

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS864418GE

同步突发

Memory & Data Storage

165

72 Mbit

2

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS88218CGB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8642Z36B-250IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

BGA

Industrial grade

166.6@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS8642Z36B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2 V

INDUSTRIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

N/A

-

N/A

-

BGA-165

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

GS8342R36BD

165

36 Mbit

1

780 mA

Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

165

144 Mbit

2

1.005 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS832236AD

Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

-40 to 100 °C

Tray

GS8162Z36DGB

NBT Pipeline/Flow Through

Memory & Data Storage

119

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

2, 2.7 V

36 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

5.5 ns

70 °C

有

GS8321Z36AGD-250V

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

表面贴装

0 to 85 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

2 V

1.8/2.5 V

COMMERCIAL

1.7 V

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

0 to 85 °C

GS8662D08BGD

165

72 Mbit

2

630 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Commercial

N/A

-

12 Weeks

BGA-119

YES

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

有

GS8322Z36AGB-200IV

200 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8322Z36AGB

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS864018GT-167IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

INDUSTRIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

SRAM

20 mm

14 mm

N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

-40 to 100 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

100

36 Mbit

4

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

有

GS832036AGT-150IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

Industrial grade

133@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

-40 to 100 °C

3A991.B.2.B

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

1.7 V

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

BGA

5.79

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

GS8662S09BD-350

无

70 °C

0.45 ns

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

0 to 85 °C

Tray

GS8662S09BD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

COMMERCIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

695 mA

Pipelined

8 M x 9

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

标准SRAM

SRAM

15 mm

13 mm

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302T38GE

SigmaDDR-II+

Memory & Data Storage

165

144 Mbit

1

1.31 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

165

72 Mbit

890 mA

0.45

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS832118AGD

Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

2

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS881Z36CGD

NBT

Memory & Data Storage

165

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

2.036513 oz

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

85 °C

有

GS832032AGT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS832032AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

SRAM

20 mm

14 mm

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8662D38BD

SigmaQuad-II+

Memory & Data Storage

165

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

85 °C

有

GS8321E18AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS8321E18AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

SRAM

15 mm

13 mm