N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662TT10BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

625 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342T10BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

680 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342D09BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662Q36BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.06 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T36BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

36 Mbit

2

715 mA

Pipelined

2 M x 18

19 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

357 MHz

FBGA

QDR

表面贴装

1.9 V

18 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

Compliant

有

357 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662Q18BD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

985 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662DT37BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

BGA

5.12

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

200 MHz

GS832236AD-200V

无

70 °C

6.5 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

1000000

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

0 to 85 °C

Bulk

GS832218AGB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 b

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

0 to 85 °C

GS8662Q10BGD

85 °C

0 °C

1.8 V

72 Mbit

2

720 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q07BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

785 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q09BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662Q09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

730 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662T08BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

425 mA

Pipelined

8 M x 8

22 b

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

150 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

有

150 MHz

+ 125 C

2.7 V

- 40 C

14

1.7 V

-40 to 125 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662R36BD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

550 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT06BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

800 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8662D36BD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

350 MHz

FBGA

-40 to 100 °C

Bulk

GS8662D36BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

895 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

Compliant

400 MHz

+ 70 C

1.9 V

0 C

Parallel

SMD/SMT

1.7 V

Commercial grade

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

0 to 85 °C

GS81302D06E

85 °C

0 °C

1.8 V

144 Mbit

2

1.055 A

0.45

16 M x 8

22 b

144 Mb

144

Commercial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

85 °C

有

GS8321E36AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

0 to 85 °C

Bulk

GS8321E36AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS8640E32GT

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 32

21 b

SRAM

64 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

YES

165

165

512000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8182T37BGD-435

435 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.47

BGA

Commercial grade

435 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

1

SYNCHRONOUS

0.75 mA

Pipelined

512KX36

3-STATE

1.4 mm

36

18 Bit

18 Mbit

0.19 A

18874368 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8640E36GT

DCD

Memory & Data Storage

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342Q10BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

955 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

有

GS88236CGD-333

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS88236CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm