GSI Technology GS88218CGB-200IV
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GS88218CGB-200IV
2984-GS88218CGB-200IV
存储器
BGA-119
大陆
立即发货

Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
1最小包装量--
GS88218CGB-200IV详情
GSI Technology GS88218CGB-200IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-119
Maximum Clock Rate
153.8@Flow-Through/200@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
512 kWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
200 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
42
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
Details
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 85 °C
系列
GS88218CGB
包装
Tray
类型
SCD/DCD Pipeline/Flow Through
子类别
Memory & Data Storage
引脚数量
119
内存大小
9 Mbit
端口的数量
2
电源电流-最大值
125 mA, 160 mA
访问时间
6.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 18
地址总线宽度
18 Bit
产品类别
SRAM
密度
9 Mbit
筛选水平
Industrial
产品类别
SRAM
GS88218CGB-200IV拓展信息
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