N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT11BGD

SigmaQuad-II+

Memory & Data Storage

165

72 Mbit

2

830 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

-40 to 100 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

Memory & Data Storage

165

36 Mbit

1

680 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

165

36 Mbit

2

945 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8321E36AGD

同步突发

Memory & Data Storage

165

36 Mbit

4

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

-40 to 100 °C

Tray

GS8662R09BD

SigmaDDR-II B4

Memory & Data Storage

165

72 Mbit

1

635 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

-40 to 100 °C

Tray

GS8162Z36DGB

NBT Pipeline/Flow Through

Memory & Data Storage

119

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

550 MHz

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

0 to 85 °C

Tray

GS8662TT20BGD

SigmaQuad-II+

Memory & Data Storage

165

72 Mbit

830 mA

0.45

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662R08BD

SigmaDDR-II B4

Memory & Data Storage

165

72 Mbit

1

625 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302DT19E

SigmaQuad-II+ B4

Memory & Data Storage

165

144 Mbit

2

890 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

-40 to 85 °C

165

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

BGA-165

DDR

Industrial grade

450 MHz

FBGA

QDR

表面贴装

18 Bit

4 MWords

Synchronous

1.8000 V

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

-40 to 100 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

165

72 Mbit

2

830 mA

Pipelined

4 M x 18

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

32 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS881E32CGD-250V

262144 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 70 °C

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

2 V

COMMERCIAL

1.7 V

9 Mbit

SYNCHRONOUS

140 mA, 180 mA

5.5@Flow-Through/3@P

256 k x 32

1.4 mm

32

SRAM

8

Commercial

PARALLEL

缓存SRAM

SRAM

15 mm

13 mm

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D07E

SigmaQuad-II+ B4

Memory & Data Storage

165

144 Mbit

2

890 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662TT11BD-350I

350 MHz

8388608 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Tray

GS8662TT11BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

SYNCHRONOUS

600 mA

8 M x 9

3-STATE

1.4 mm

9

SRAM

0.24 A

72

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

1.8000 V

表面贴装

1.9 V

8 Bit

8 MWords

Synchronous

1.7 V

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

GS8662DT07BGD

165

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Industrial

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS832218AB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

119

36 Mbit

2

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Commercial

SRAM

无

N/A

-

BGA-165

450 MHz

FBGA

1.8000 V

Synchronous

36 Bit

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

0 to 85 °C

Tray

GS8342T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

165

1.8 V

36 Mbit

1

860 mA

0.45

1 M x 36

19 b

SRAM

36 Mb

36

Commercial

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342DT19BD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

165

1.8 V

36 Mbit

2

795 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

YES

119

GSI TECHNOLOGY

5.21

BGA

Compliant

BGA, BGA119,7X17,50

网格排列

3

256000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

8.5 ns

85 °C

无

GS840H18AB-166I

166 MHz

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

3.3 V

3.6 V

2.5/3.3,3.3 V

INDUSTRIAL

3 V

2

SYNCHRONOUS

0.32 mA

256KX18

3-STATE

2.19 mm

18

18 b

4.5 Mb

0.03 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

22 mm

14 mm

无

N/A

-

Compliant

Bulk

85 °C

0 °C

1.8 V

2

23 b

144 Mb

144

无

N/A

-

1.8000 V

Synchronous

1 MWords

18 Bit

表面贴装

Compliant

Industrial grade

400 MHz

FBGA

DDR

-40 to 85 °C

85 °C

-40 °C

165

1.8 V

1

Pipelined

20 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

200 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

-40 to 100 °C

Tray

GS8662Q09BD

SigmaQuad-II

Memory & Data Storage

165

72 Mbit

610 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

70 °C

有

GS88118CGD-150

524288 words

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

Tray

GS88118CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

3.6 V

COMMERCIAL

3 V

9 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9437184 bit

SERIAL

缓存SRAM

SRAM

15 mm

13 mm

N/A

-

BGA-119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 125 C

3.6 V

- 55 C

42

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM