GSI Technology GS881E32CGD-250V

工厂交货时间

8 Weeks

包装/外壳

BGA-165

表面安装

YES

终端数量

165

Maximum Clock Rate

181.8@Flow-Through/250@Pipelined MHz

Supplier Package

FBGA

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of I/O Lines

32 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Moisture Sensitive

有

Maximum Clock Frequency

250 MHz

Maximum Operating Temperature

+ 70 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

0 C

Factory Pack QuantityFactory Pack Quantity

66

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

RoHS

Details

Memory Types

SDR

Package Description

LBGA,

Package Style

GRID ARRAY, LOW PROFILE

Moisture Sensitivity Levels

3

Number of Words Code

256000

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Access Time-Max

5.5 ns

Operating Temperature-Max

70 °C

Rohs Code

有

Manufacturer Part Number

GS881E32CGD-250V

Number of Words

262144 words

Supply Voltage-Nom (Vsup)

1.8 V

Package Code

LBGA

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Ihs Manufacturer

GSI TECHNOLOGY

Risk Rank

5.16

Part Package Code

BGA

Usage Level

Commercial grade

操作温度

0 to 70 °C

系列

GS881E32CGD

包装

Tray

JESD-609代码

e1

无铅代码

有

ECCN 代码

3A991.B.2.B

类型

DCD Pipeline/Flow Through

端子表面处理

Tin/Silver/Copper (Sn/Ag/Cu)

附加功能

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

HTS代码

8542.32.00.41

子类别

Memory & Data Storage

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

峰值回流焊温度（摄氏度）

260

功能数量

1

端子间距

1 mm

Reach合规守则

compliant

引脚数量

165

JESD-30代码

R-PBGA-B165

资历状况

不合格

电源电压-最大值(Vsup)

2 V

温度等级

COMMERCIAL

电源电压-最小值(Vsup)

1.7 V

内存大小

9 Mbit

操作模式

SYNCHRONOUS

电源电流-最大值

140 mA, 180 mA

访问时间

5.5@Flow-Through/3@P

组织结构

256 k x 32

座位高度-最大

1.4 mm

内存宽度

32

产品类别

SRAM

记忆密度

8

筛选水平

Commercial

并行/串行

PARALLEL

内存IC类型

缓存SRAM

产品类别

SRAM

宽度

13 mm

长度

15 mm