N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS88218CGB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

GS8642Z36B-250IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

BGA

无

85 °C

Industrial grade

166.6@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS8642Z36B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

GS8342R36BD

36 Mbit

1

780 mA

Pipelined

1 M x 36

20 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S08GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

1.005 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

SyncBurst

SDR

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS832236AD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302T38GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.31 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

890 mA

0.45

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

BGA-165

165

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

SDR

Details

0 to 85 °C

Tray

GS832118AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

表面贴装

2, 2.7 V

36 Bit

256 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

181.8@Flow-Through/250@Pipelined MHz

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS881Z36CGD

NBT

Memory & Data Storage

9 Mbit

1

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS864272GC

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

285 mA, 385 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

10 Weeks

YES

48

48

有

GS71116AGU-10T

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

10 ns

70 °C

0 to 70 °C

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1

ASYNCHRONOUS

0.1 mA

64KX16

3-STATE

1.2 mm

16

16 Bit

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

8 mm

6 mm

N/A

-

8 Weeks

YES

165

165

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

BGA

200 MHz

FBGA

1.8000 V

1.7 V

18 Bit

1.9 V

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q18BGD-200

200 MHz

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

SYNCHRONOUS

0.6 mA

0.45

4MX18

3-STATE

1.4 mm

18

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302S09GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

825 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662QT07BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

930 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

8 Bit

2 MWords

Industrial grade

400 MHz

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

8 Weeks

BGA-209

YES

209

209

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

无

GS816272CC-333I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS816272CC

无

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

330 mA, 400 mA

4.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302S36GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

1.105 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302S18GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

890 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8322Z36AGB

NBT

Memory & Data Storage

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

YES

119

119

3

128000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS840H32AGB-150I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

BGA,

网格排列

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

128KX32

2.19 mm

32

4194304 bit

PARALLEL

缓存SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

375 MHz

有

Industrial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

375 MHz

DDR-II

Details

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302T09GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

855 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS864272C-167IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS864272C

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

7 Weeks, 4 Days

BGA-209

YES

209

209

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8642Z72C-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 85 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

295 mA, 405 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

1.7 mm

72

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

2.036513 oz

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

85 °C

有

GS832032AGT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS832032AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm