N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

0 to 85 °C

Bulk

GS8662TT07BGD

85 °C

0 °C

1.8 V

72 Mbit

1

495 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

表面贴装

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88136CGT-200V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.28

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

0 to 70 °C

GS88136CGT

3A991.B.2.B

70 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

有

GS832118AGD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

-40 to 100 °C

Tray

GS832118AGD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

18874368 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

357 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

357 MHz

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

72 Mbit

2

985 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Commercial

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 85 °C

Tray

GS8642Z36GB

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

18 b

18 Mb

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT07BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

945 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

512000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS88218CGB-300

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

BGA

Commercial grade

300 MHz

FBGA

SDR

0 to 70 °C

Tray

GS88218CGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302TT06GE-500I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

500 MHz

FBGA

-40 to 100 °C

Tray

GS81302TT06GE

e1

有

3A991.B.2.B

SigmaDDR-II+

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

1.08 A

Pipelined

16 M x 8

1.5 mm

8

23 Bit

SRAM

144 Mbit

134217728 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT38BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

985 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Compliant

400 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

250@Flow-Through/400@Pipelined MHz

-40 to 100 °C

Bulk

GS816236DGB

100 °C

-40 °C

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

0 to 85 °C

GS8662T19BGD

85 °C

0 °C

1.8 V

72 Mbit

1

625 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT37BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

735 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS8160E18DGT-400I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

QFP

Industrial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS8160E18DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT20E

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

800 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4.2 ns

70 °C

无

GS8322Z36AB-375

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS8322Z36AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342TT07BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

680 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

6 Weeks

YES

44

44

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

未说明

10 ns

70 °C

有

GS74116AGP-10T

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

TSOP2

Compliant

有

3A991.B.2.B

Pure Matte Tin (Sn)

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

COMMERCIAL

ASYNCHRONOUS

0.105 mA

256KX16

3-STATE

1.2 mm

16

0.01 A

4194304 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662T08BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T06BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

590 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

400 MHz

+ 70 C

3.6 V

0 C

36

0 to 70 °C

Bulk

GS816132DD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

5.5 ns

85 °C

无

GS8322Z18AD-250IV

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 100 °C

Bulk

GS8322Z18AD

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS864236GB-200I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS864236GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS8321E18AGD

同步突发

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II+

DDR-II

Military grade

450 MHz

BGA

DDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

Compliant

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

Bulk

GS81302T06E

SigmaDDR-II+

Memory & Data Storage

1.8 V

144 Mbit

Pipelined

16 M x 8

24 Bit

SRAM

144 Mbit

Military

SRAM

无