GSI Technology GS8321E18AGD-150IV
- 收藏
- 对比
GS8321E18AGD-150IV
2984-GS8321E18AGD-150IV
存储器
BGA-165
大陆
立即发货

Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
1最小包装量--
GS8321E18AGD-150IV详情
GSI Technology GS8321E18AGD-150IV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
引脚数
165
Maximum Clock Rate
133@Flow-Through/150@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
1.8, 2.5 V
Minimum Operating Supply Voltage
1.7, 2.3 V
Timing Type
Synchronous
Number of Words
2 MWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
2, 2.7 V
Mounting
表面贴装
RoHS
Compliant
Moisture Sensitive
有
Maximum Clock Frequency
150 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
2.7 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
18
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
Memory Types
SDR
Usage Level
Industrial grade
操作温度
-40 to 100 °C
包装
Bulk
系列
GS8321E18AGD
类型
同步突发
最高工作温度
100 °C
最小工作温度
-40 °C
子类别
Memory & Data Storage
内存大小
36 Mbit
端口的数量
2
电源电流-最大值
205 mA, 220 mA
访问时间
7.5 ns
建筑学
Flow-Through/Pipelined
组织结构
2 M x 18
地址总线宽度
21 Bit
产品类别
SRAM
密度
36 Mb
筛选水平
Industrial
产品类别
SRAM
辐射硬化
无
GS8321E18AGD-150IV拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。